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Results: 1-25/31
Authors:
PAN JS
HUAN CHA
WEE ATS
TAN HS
TAN KL
Citation: Js. Pan et al., AUGER-ELECTRON SPECTROSCOPY AND X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSIS OF ANGLE OF INCIDENCE EFFECTS OF ION-BEAM NITRIDATION OF GAAS, Journal of materials research, 13(7), 1998, pp. 1799-1807
Authors:
WEE ATS
LI K
TIN CC
Citation: Ats. Wee et al., SURFACE CHEMICAL-STATES ON LPCVD-GROWN 4H-SIC EPILAYERS, Applied surface science, 126(1-2), 1998, pp. 34-42
Authors:
WEE ATS
FOORD JS
EGDELL RG
PETHICA JB
Citation: Ats. Wee et al., SUPERSTRUCTURE FORMATION AND FACETING IN THE CU(210)-O SYSTEM STUDIEDBY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 58(12), 1998, pp. 7548-7551
Authors:
PAN JS
TAY ST
HUAN CHA
WEE ATS
Citation: Js. Pan et al., ATOMIC-FORCE MICROSCOPY INVESTIGATION OF THE O-2(-INDUCED SURFACE-TOPOGRAPHY OF INP()), Surface and interface analysis, 26(12), 1998, pp. 930-938
Authors:
LUO L
ZYBILL CE
ANG HG
LIM SF
CHUA DHC
LIN J
WEE ATS
TAN KL
Citation: L. Luo et al., SUBSTRATE INFLUENCE ON THE FORMATION OF FESI AND FESI2 FILMS FROM CIS-FE(SICL3)(2)(CO)(4) BY LPCVD, Thin solid films, 325(1-2), 1998, pp. 87-91
Authors:
LI K
WEE ATS
LIN J
TAN KL
ZHOU L
LI SFY
FENG ZC
CHOU HC
KAMRA S
ROHATGI A
Citation: K. Li et al., A MICROSTRUCTURAL STUDY ON THE SURFACE AND INTERFACE OF CDTE CDS SOLAR-CELLS/, Journal of materials science. Materials in electronics, 8(3), 1997, pp. 125-132
Authors:
LOW MHS
HUAN CHA
WEE ATS
TAN KL
Citation: Mhs. Low et al., IONIZATION PROBABILITY OF SI+ ION EMISSION FROM CLEAN SI UNDER AR+ BOMBARDMENT, Journal of physics. Condensed matter, 9(43), 1997, pp. 9427-9433
Authors:
SUN CQ
ZHANG S
HING P
WEI J
XIE H
WEE ATS
Citation: Cq. Sun et al., SPECTRAL CORRESPONDENCE TO THE EVOLUTION OF CHEMICAL-BOND AND VALENCE-BAND IN OXIDATION, Modern physics letters B, 11(25), 1997, pp. 1103-1113
Authors:
PAN JS
WEE ATS
HUAN CHA
TAN HS
TAN KL
Citation: Js. Pan et al., AES ANALYSIS OF NITRIDATION OF SI(100) BY 2-10 KEV N-2(-BEAMS() ION), Applied surface science, 115(2), 1997, pp. 166-173
Authors:
LI K
WEE ATS
LIN J
LEE KK
WATT F
TAN KL
FENG ZC
WEBB JB
Citation: K. Li et al., A SURFACE AND INTERFACE STUDY ON THE INSB GAAS HETEROSTRUCTURES/, Thin solid films, 302(1-2), 1997, pp. 111-115
Authors:
PAN JS
WEE ATS
HUAN CHA
TAN HS
TAN KL
Citation: Js. Pan et al., ARXPS ANALYSIS OF SURFACE COMPOSITIONAL CHANGE IN AR-BOMBARDED GAAS(100)( ION), Journal of physics. D, Applied physics, 30(18), 1997, pp. 2514-2519
Authors:
FENG ZC
ROHATGI A
TIN CC
HU R
WEE ATS
SE KP
Citation: Zc. Feng et al., STRUCTURAL, OPTICAL, AND SURFACE SCIENCE STUDIES OF 4H-SIC EPILAYERS GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 25(5), 1996, pp. 917-923
Authors:
LI K
LIN J
WEE ATS
TAN KL
FENG ZC
WEBB JB
Citation: K. Li et al., SURFACE AND INTERFACE ANALYSIS OF GASB GAAS SEMICONDUCTOR-MATERIALS/, Applied surface science, 99(1), 1996, pp. 59-66
Authors:
HUAN CH
WEE ATS
LOW HSM
TAN KL
Citation: Ch. Huan et al., SECONDARY-ION EMISSION FROM SILICON UNDER 8 KEV O-2(-BOMBARDMENT() AND AR+ ION), Vacuum, 47(2), 1996, pp. 119-127
Authors:
PAN JS
WEE ATS
HUAN CHA
TAN HS
TAN KL
Citation: Js. Pan et al., AES ANALYSIS OF SILICON-NITRIDE FORMATION BY 10-KEV N-2(+) ION-IMPLANTATION( AND N), Vacuum, 47(12), 1996, pp. 1495-1499
Authors:
WEE ATS
HUAN ACH
OSIPOWICZ T
LEE KK
THIAN WH
TAN KL
HOGAN R
Citation: Ats. Wee et al., SURFACE AND INTERFACE STUDIES OF TITANIUM SILICIDE FORMATION, Thin solid films, 283(1-2), 1996, pp. 130-134
Authors:
PAN JS
WEE ATS
HUAN CHA
TAN HS
TAN KL
Citation: Js. Pan et al., XPS STUDIES ON NITRIDATION OF INP(100) SURFACE BY N-2(-BEAM BOMBARDMENT() ION), Journal of physics. D, Applied physics, 29(12), 1996, pp. 2997-3002
Authors:
PAN JS
WEE ATS
HUAN CHA
TAN HS
TAN KL
Citation: Js. Pan et al., ARGON INCORPORATION AND SURFACE COMPOSITIONAL CHANGES IN INP(100) DUETO LOW-ENERGY AR-BOMBARDMENT( ION), Journal of applied physics, 80(12), 1996, pp. 6655-6660
ARGON INCORPORATION AND SILICON-CARBIDE FORMATION DURING LOW-ENERGY ARGON-ION BOMBARDMENT OF SI(100)
Authors:
PAN JS
WEE ATS
HUAN CHA
TAN HS
Citation: Js. Pan et al., ARGON INCORPORATION AND SILICON-CARBIDE FORMATION DURING LOW-ENERGY ARGON-ION BOMBARDMENT OF SI(100), Journal of applied physics, 79(6), 1996, pp. 2934-2941
Authors:
FENG ZC
CHOU HC
ROHATGI A
LIM GK
WEE ATS
TAN KL
Citation: Zc. Feng et al., CORRELATIONS BETWEEN CDTE CDS/SNO2/GLASS SOLAR-CELL PERFORMANCE AND THE INTERFACE SURFACE-PROPERTIES/, Journal of applied physics, 79(4), 1996, pp. 2151-2153
Authors:
WEE ATS
FENG ZC
HNG HH
TAN KL
FARROW RFC
CHOYKE WJ
Citation: Ats. Wee et al., XPS AND SIMS STUDIES OF MBE-GROWN CDTE INSB(001) HETEROSTRUCTURES/, Journal of physics. Condensed matter, 7(23), 1995, pp. 4359-4369
Authors:
KINGSLEY CR
WHITAKER TJ
WEE ATS
JACKMAN RB
FOORD JS
Citation: Cr. Kingsley et al., DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 78-82
Authors:
LOW MHS
HUAN CHA
WEE ATS
TAN KL
Citation: Mhs. Low et al., AN ALTERNATIVE METHOD FOR DETERMINING THE TRANSMISSION FUNCTION OF SECONDARY-ION MASS SPECTROMETERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(4), 1995, pp. 482-488
Authors:
LIN J
WEE ATS
HUAN ACH
TAN KL
NEOH KG
Citation: J. Lin et al., X-RAY PHOTOELECTRON-SPECTROSCOPY FOURIER-TRANSFORM INFRARED-SPECTROSCOPY STUDY OF THE INTERACTION OF YBA2CU3OX WITH CO, NO, AND H2+CO, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 2074-2080
Authors:
WEE ATS
FENG ZC
HNG HH
TAN KL
TIN CC
HU R
COSTON R
Citation: Ats. Wee et al., SURFACE CHEMICAL-STATES ON 3C-SIC SI EPILAYERS/, Applied surface science, 81(4), 1994, pp. 377-385