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Results: 26-38/38
Authors:
WESCH W
HEFT A
HEINDL J
STRUNK HP
BACHMANN T
GLASER E
WENDLER E
Citation: W. Wesch et al., INVESTIGATION OF RADIATION-DAMAGE IN ION-IMPLANTED AND ANNEALED SIC LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 339-345
Authors:
ZAMMIT U
MADHUSOODANAN KN
MARINELLI M
SCUDIERI F
PIZZOFERRATO R
MERCURI F
WENDLER E
WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTED AND AMORPHOUS-SILICON, Journal de physique. IV, 4(C7), 1994, pp. 113-120
Authors:
BACHMANN T
SCHIPPEL S
WENDLER E
WESCH W
RICHTER U
WITTHUHN W
Citation: T. Bachmann et al., COMPARISON OF MEV-IMPLANTED GAAS AND INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 89(1-4), 1994, pp. 168-173
Authors:
WENDLER E
GARTNER K
WESCH W
ZAMMIT U
MADHUSOODANAN KN
Citation: E. Wendler et al., DEFECT INVESTIGATION IN BORON-IMPLANTED SILICON BY MEANS OF TEMPERATURE-DEPENDENT RBS AND OPTICAL NEAR-EDGE ABSORPTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 528-532
Authors:
WESCH W
WENDLER E
KACZANOWSKI J
TUROS A
Citation: W. Wesch et al., TEMPERATURE-DEPENDENT DECHANNELING OF 1.4 MEV HE-EDGE ABSORPTION IN B+ IMPLANTED GAP( AND OPTICAL NEAR), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 533-536
Authors:
ZAMMIT U
MADHUSOODANAN KN
SCUDIERI F
MERCURI F
WENDLER E
WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION STUDY OF STRUCTURAL RELAXATION OF ION-IMPLANTED A-SI, Physical review. B, Condensed matter, 49(3), 1994, pp. 2163-2166
Authors:
ZAMMIT U
MADHUSOODANAN KN
MARINELLI M
SCUDIERI F
PIZZOFERRATO R
MERCURI F
WENDLER E
WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION STUDIES OF ION-IMPLANTATION DAMAGE IN SI ON SAPPHIRE, Physical review. B, Condensed matter, 49(20), 1994, pp. 14322-14330
Authors:
WENDLER E
MULLER P
BACHMANN T
WESCH W
Citation: E. Wendler et al., SUBGAP OPTICAL-PROPERTIES OF AMORPHOUS INP PRODUCED BY ION-IMPLANTATION, Journal of non-crystalline solids, 176(1), 1994, pp. 85-90
Authors:
WENDLER E
MULLER P
BACHMANN T
WESCH W
Citation: E. Wendler et al., SUBGAP OPTICAL-PROPERTIES OF AMORPHOUS INP PRODUCED BY ION-IMPLANTATION, Journal of non-crystalline solids, 176(1), 1994, pp. 85-90
Authors:
MULLER P
BACHMANN T
WENDLER E
WESCH W
Citation: P. Muller et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF SI-IMPLANTED AND SE-IMPLANTEDINP LAYERS, Journal of applied physics, 75(8), 1994, pp. 3814-3821
Authors:
WENDLER E
MULLER P
BACHMANN T
WESCH W
Citation: E. Wendler et al., DEFECT PRODUCTION, ANNEALING AND ELECTRICAL ACTIVATION IN SI+ IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 711-715
Authors:
WESCH W
WENDLER E
Citation: W. Wesch et E. Wendler, HIGH-ENERGY ION-IMPLANTATION IN GAAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 716-720
Authors:
MULLER P
WESCH W
SOLOVYEV VS
GAIDUK PI
WENDLER E
KOMAROV FF
GOTZ G
Citation: P. Muller et al., LOW-TEMPERATURE RECRYSTALLIZATION OF ION-IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 721-725