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Results: 1-8 |
Results: 8
OBSERVATION OF CHANNEL SHORTENING IN N-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ARISING FROM INTERCONNECT PLASMA PROCESSING
Authors: ELHASSAN MG AWADELKARIM OO WERKING J
Citation: Mg. Elhassan et al., OBSERVATION OF CHANNEL SHORTENING IN N-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS ARISING FROM INTERCONNECT PLASMA PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1435-1439
GATE LEAKAGE CURRENT - A SENSITIVE CHARACTERIZATION PARAMETER FOR PLASMA-INDUCED DAMAGE DETECTION IN ULTRATHIN OXIDE SUBMICRON TRANSISTORS
Authors: JIANG J AWADELKARIM OO WERKING J
Citation: J. Jiang et al., GATE LEAKAGE CURRENT - A SENSITIVE CHARACTERIZATION PARAMETER FOR PLASMA-INDUCED DAMAGE DETECTION IN ULTRATHIN OXIDE SUBMICRON TRANSISTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1664-1669
THE EFFECTS OF INTERLAYER DIELECTRIC DEPOSITION AND PROCESSING ON THERELIABILITY OF N-CHANNEL TRANSISTORS
Authors: TRABZON L AWADELKARIM OO WERKING J
Citation: L. Trabzon et al., THE EFFECTS OF INTERLAYER DIELECTRIC DEPOSITION AND PROCESSING ON THERELIABILITY OF N-CHANNEL TRANSISTORS, Solid-state electronics, 42(11), 1998, pp. 2031-2037
CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING
Authors: OKANDAN M FONASH SJ OZAITA M PREUNINGER F CHAN YD WERKING J
Citation: M. Okandan et al., CYCLIC CURRENT-VOLTAGE CHARACTERIZATION APPLIED TO EDGE DAMAGE EVALUATION IN GATE DEFINITION PLASMA-ETCHING, IEEE electron device letters, 18(10), 1997, pp. 495-498
FOWLER-NORDHEIM STRESSING OF POLYCRYSTALLINE SI OXIDE SI STRUCTURES -OBSERVATION OF STRESS-INDUCED DEFECTS IN THE OXIDE, OXIDE SI INTERFACE, AND IN BULK SILICON/
Authors: JIANG J AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: J. Jiang et al., FOWLER-NORDHEIM STRESSING OF POLYCRYSTALLINE SI OXIDE SI STRUCTURES -OBSERVATION OF STRESS-INDUCED DEFECTS IN THE OXIDE, OXIDE SI INTERFACE, AND IN BULK SILICON/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 875-879
COMPARISON BETWEEN DIRECT-CURRENT AND SINUSOIDAL CURRENT STRESSING OFGATE OXIDES AND OXIDE SILICON INTERFACES IN METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS/
Authors: TRABZON L AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: L. Trabzon et al., COMPARISON BETWEEN DIRECT-CURRENT AND SINUSOIDAL CURRENT STRESSING OFGATE OXIDES AND OXIDE SILICON INTERFACES IN METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 81(3), 1997, pp. 1575-1580
SINUSOIDAL AC STRESSING OF THIN-GATE OXIDES AND OXIDE SILICON INTERFACES IN 0.5-MU-M N-MOSFETS/
Authors: TRABZON L AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: L. Trabzon et al., SINUSOIDAL AC STRESSING OF THIN-GATE OXIDES AND OXIDE SILICON INTERFACES IN 0.5-MU-M N-MOSFETS/, IEEE electron device letters, 17(12), 1996, pp. 569-571
A COMPARISON BETWEEN PLASMA CHARGING-DAMAGE AND INDUCTIVE-DAMAGE - DAMAGE RESPONSE TO FOWLER-NORDHEIM STRESS
Authors: SALAH A AWADELKARIM OO WERKING J BERSUKER G CHAN YD
Citation: A. Salah et al., A COMPARISON BETWEEN PLASMA CHARGING-DAMAGE AND INDUCTIVE-DAMAGE - DAMAGE RESPONSE TO FOWLER-NORDHEIM STRESS, Solid-state electronics, 39(12), 1996, pp. 1701-1707
Risultati: 1-8 |