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Results: 1-10 |
Results: 10
LOW-TEMPERATURE ELECTRON-PHONON INTERACTION IN SI MOSFETS
Authors: ZIEVE RJ PROBER DE WHEELER RG
Citation: Rj. Zieve et al., LOW-TEMPERATURE ELECTRON-PHONON INTERACTION IN SI MOSFETS, Physical review. B, Condensed matter, 57(4), 1998, pp. 2443-2446
ZEEMAN SPLITTING OF SINGLE SEMICONDUCTOR IMPURITIES IN RESONANT-TUNNELING HETEROSTRUCTURES
Authors: DESHPANDE MR SLEIGHT JW REED MA WHEELER RG MATYI RJ
Citation: Mr. Deshpande et al., ZEEMAN SPLITTING OF SINGLE SEMICONDUCTOR IMPURITIES IN RESONANT-TUNNELING HETEROSTRUCTURES, Superlattices and microstructures, 20(4), 1996, pp. 513-522
ENERGY-AVERAGED WEAK-LOCALIZATION IN CHAOTIC MICROCAVITIES
Authors: KELLER MW MITTAL A SLEIGHT JW WHEELER RG PROBER DE SACKS RN SHTRIKMANN H
Citation: Mw. Keller et al., ENERGY-AVERAGED WEAK-LOCALIZATION IN CHAOTIC MICROCAVITIES, Physical review. B, Condensed matter, 53(4), 1996, pp. 1693-1696
ELECTRON-SPECTROSCOPIC STUDY OF VERTICAL IN1-XGAXAS QUANTUM DOTS
Authors: SLEIGHT JW HORNBECK ES DESHPANDE MR WHEELER RG REED MA BOWEN RC FRENSLEY WR RANDALL JN MATYI RJ
Citation: Jw. Sleight et al., ELECTRON-SPECTROSCOPIC STUDY OF VERTICAL IN1-XGAXAS QUANTUM DOTS, Physical review. B, Condensed matter, 53(23), 1996, pp. 15727-15737
ELECTRON-PHONON SCATTERING RATES IN GAAS ALGAAS 2DEG SAMPLES BELOW 0.5 K/
Authors: MITTAL A WHEELER RG KELLER MW PROBER DE SACKS RN
Citation: A. Mittal et al., ELECTRON-PHONON SCATTERING RATES IN GAAS ALGAAS 2DEG SAMPLES BELOW 0.5 K/, Surface science, 362(1-3), 1996, pp. 537-541
SPIN SPLITTING OF SINGLE 0D IMPURITY STATES IN SEMICONDUCTOR HETEROSTRUCTURE QUANTUM-WELLS
Authors: DESHPANDE MR SLEIGHT JW REED MA WHEELER RG MATYI RJ
Citation: Mr. Deshpande et al., SPIN SPLITTING OF SINGLE 0D IMPURITY STATES IN SEMICONDUCTOR HETEROSTRUCTURE QUANTUM-WELLS, Physical review letters, 76(8), 1996, pp. 1328-1331
ELECTRON-TEMPERATURE AND THERMAL CONDUCTANCE OF GAAS 2D ELECTRON-GAS SAMPLES BELOW 0.5-K
Authors: MITTAL A KELLER MW WHEELER RG PROBER DE SACKS RN
Citation: A. Mittal et al., ELECTRON-TEMPERATURE AND THERMAL CONDUCTANCE OF GAAS 2D ELECTRON-GAS SAMPLES BELOW 0.5-K, Physica. B, Condensed matter, 194, 1994, pp. 167-168
TRANSITIONS BETWEEN EDGE AND BULK CHANNELS IN THE QUANTUM HALL REGIME
Authors: RICHTER CA WHEELER RG SACKS RN
Citation: Ca. Richter et al., TRANSITIONS BETWEEN EDGE AND BULK CHANNELS IN THE QUANTUM HALL REGIME, Surface science, 305(1-3), 1994, pp. 145-150
DETERMINATION OF SI SIO2 INTERFACE ROUGHNESS USING WEAK-LOCALIZATION/
Authors: ANDERSON WR LOMBARDI DR WHEELER RG MA TP
Citation: Wr. Anderson et al., DETERMINATION OF SI SIO2 INTERFACE ROUGHNESS USING WEAK-LOCALIZATION/, IEEE electron device letters, 14(7), 1993, pp. 351-353
DETERMINATION OF SI SIO2 INTERFACIAL ROUGHNESS USING WEAK-LOCALIZATION/
Authors: ANDERSON WR LOMBARDI DR MITEV PH MA TP WHEELER RG
Citation: Wr. Anderson et al., DETERMINATION OF SI SIO2 INTERFACIAL ROUGHNESS USING WEAK-LOCALIZATION/, Microelectronic engineering, 22(1-4), 1993, pp. 43-46
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