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Results:
1-14
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Results: 14
Authors:
WICKRAMANAYAKA S
LI YL
IIZUKA S
TAKAGI K
NAKAGAWA Y
TSUKADA T
SATO N
Citation: S. Wickramanayaka et al., VARIATION OF RADIAL PLASMA-DENSITY PROFILE WITH THE EXCITATION-FREQUENCY IN A MAGNETRON-TYPE PLASMA, JPN J A P 1, 37(4A), 1998, pp. 2035-2038
Authors:
WROBEL AM
WALKIEWICZPIETRZYKOWSKA A
WICKRAMANAYAKA S
HATANAKA Y
Citation: Am. Wrobel et al., MECHANISM OF AMORPHOUS SILICA FILM FORMATION FROM TETRAETHOXYSILANE IN ATOMIC OXYGEN-INDUCED CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 145(8), 1998, pp. 2866-2876
Authors:
WICKRAMANAYAKA S
TAKAGI E
NAKAGAWA Y
TSUKADA T
SATO N
Citation: S. Wickramanayaka et al., MEASUREMENTS OF POWER ABSORPTION IN A MODIFIED MAGNETRON-TYPE DISCHARGE, JPN J A P 1, 36(8), 1997, pp. 5306-5309
Authors:
WROBEL AM
WICKRAMANAYAKA S
NAKANISHI Y
HATANAKA Y
PAWLOWSKI S
OLEJNICZAK W
Citation: Am. Wrobel et al., ATOMIC HYDROGEN-INDUCED CHEMICAL-VAPOR-DEPOSITION OF A-SI-C-H THIN-FILM MATERIALS FROM ALKYLSILANE PRECURSORS, DIAMOND AND RELATED MATERIALS, 6(9), 1997, pp. 1081-1091
Authors:
WICKRAMANAYAKA S
NAKANISHI Y
HATANAKA Y
Citation: S. Wickramanayaka et al., ON THE CHEMISTRY OF A-SIO2 DEPOSITION BY PLASMA-ENHANCED CVD, Applied surface science, 114, 1997, pp. 670-674
Authors:
AOKI T
MORITA M
WICKRAMANAYAKA S
NAKANISHI Y
HATANAKA Y
Citation: T. Aoki et al., GROWTH OF ZNSE THIN-FILMS BY RADICAL ASSISTED MOCVD METHOD, Applied surface science, 92, 1996, pp. 132-137
Authors:
SANO K
HAYASHI S
WICKRAMANAYAKA S
HATANAKA Y
Citation: K. Sano et al., HIGH-QUALITY SIO2 DEPOSITIONS FROM TEOS BY ECR PLASMA, Thin solid films, 282(1-2), 1996, pp. 397-400
Authors:
WROBEL AM
WICKRAMANAYAKA S
NAKANISHI Y
HATANAKA Y
Citation: Am. Wrobel et al., HIGH-QUALITY AMORPHOUS HYDROGENATED SILICON-CARBIDE COATINGS BY REMOTE PLASMA CHEMICAL-VAPOR-DEPOSITION FROM A SINGLE-SOURCE PRECURSOR, Journal of materials processing technology, 53(1-2), 1995, pp. 477-482
Authors:
WROBEL AM
WICKRAMANAYAKA S
NAKANISHI Y
FUKUDA Y
HATANAKA Y
Citation: Am. Wrobel et al., REMOTE HYDROGEN PLASMA CHEMICAL-VAPOR-DEPOSITION OF AMORPHOUS HYDROGENATED SILICON-CARBON FILMS FROM AN ORGANOSILANE MOLECULAR CLUSTER AS ANOVEL SINGLE-SOURCE PRECURSOR - STRUCTURE, GROWTH-MECHANISM, AND PROPERTIES OF THE DEPOSIT, Chemistry of materials, 7(7), 1995, pp. 1403-1413
Authors:
WICKRAMANAYAKA S
NAKANISHI Y
HATANAKA Y
Citation: S. Wickramanayaka et al., RELATIONSHIP BETWEEN HYDROGENATION AND OPTICAL-PROPERTIES OF DIELECTRIC A-SIC-H FILMS PREPARED BY TETRAKIS(TRIMETHYLSILYL)SILANE IN REMOTE H-2 PLASMA, Journal of applied physics, 77(5), 1995, pp. 2061-2066
Authors:
AOKI T
WICKRAMANAYAKA S
WROBEL AM
NAKANISHI Y
HATANAKA Y
Citation: T. Aoki et al., PREPARATION AND CHARACTERIZATION OF COPPER-FILMS DEPOSITED IN HYDROGEN REMOTE PLASMA BY COPPER(II) ACETYLACETONATE, Journal of the Electrochemical Society, 142(1), 1995, pp. 166-169
Authors:
WICKRAMANAYAKA S
MATSUMOTO A
NAKANISHI Y
HOSOKAWA N
HATANAKA Y
Citation: S. Wickramanayaka et al., REMOTE PLASMA SIO2 DEPOSITION BY TETRAETHOXYSILANE WITH CHEMICALLY AND ENERGETICALLY DIFFERENT ATOMIC SPECIES, JPN J A P 1, 33(6A), 1994, pp. 3520-3527
Authors:
WROBEL AM
WICKRAMANAYAKA S
HATANAKA Y
Citation: Am. Wrobel et al., REMOTE HYDROGEN PLASMA CHEMICAL-VAPOR-DEPOSITION USING AN ORGANOPENTASILANE CLUSTER AS A NOVEL FILM-FORMING PRECURSOR - MECHANISM OF THE ACTIVATION STEP, Journal of applied physics, 76(1), 1994, pp. 558-562
Authors:
WICKRAMANAYAKA S
HATANAKA Y
NAKANISHI Y
WROBEL AM
Citation: S. Wickramanayaka et al., PREPARATION AND DEPOSITION MECHANISM OF A-SIC-H FILMS BY USING HEXAMETHYLDISILANE IN A REMOTE H-2 PLASMA, Journal of the Electrochemical Society, 141(10), 1994, pp. 2910-2914
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