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Results: 1-9 |
Results: 9
INP-HBTS WITH GOOD HIGH-FREQUENCY PERFORMANCE AT LOW COLLECTOR CURRENTS USING SILICON-NITRIDE PLANARISATION
Authors: WILLEN B HAGA D
Citation: B. Willen et D. Haga, INP-HBTS WITH GOOD HIGH-FREQUENCY PERFORMANCE AT LOW COLLECTOR CURRENTS USING SILICON-NITRIDE PLANARISATION, Electronics Letters, 33(8), 1997, pp. 719-720
VERTICAL INTEGRATION OF AN INGAAS INP HBT AND A 1.55-MU-M STRAINED MQW P-SUBSTRATE LASER/
Authors: ERIKSSON U EVALDSSON P WALLIN J STALNACKE B LOURDUDOSS S WILLEN B
Citation: U. Eriksson et al., VERTICAL INTEGRATION OF AN INGAAS INP HBT AND A 1.55-MU-M STRAINED MQW P-SUBSTRATE LASER/, IEE proceedings. Optoelectronics, 143(1), 1996, pp. 107-109
NEW PLANARISATION PROCESS FOR LOW CURRENT, HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: WILLEN B MOKHTARI M WESTERGREN U
Citation: B. Willen et al., NEW PLANARISATION PROCESS FOR LOW CURRENT, HIGH-SPEED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 32(3), 1996, pp. 266-267
20GHZ BANDWIDTH MONOLITHIC OPTOELECTRONIC RECEIVER BASED ON SSMBE-GROWN INP HBT TECHNOLOGY
Authors: WESTERGREN U WILLEN B ASONEN H
Citation: U. Westergren et al., 20GHZ BANDWIDTH MONOLITHIC OPTOELECTRONIC RECEIVER BASED ON SSMBE-GROWN INP HBT TECHNOLOGY, Electronics Letters, 32(18), 1996, pp. 1719-1720
HIGH-GAIN, HIGH-SPEED INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A STEP-GRADED BASE-COLLECTOR HETEROJUNCTION/
Authors: WILLEN B WESTERGREN U ASONEN H
Citation: B. Willen et al., HIGH-GAIN, HIGH-SPEED INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A STEP-GRADED BASE-COLLECTOR HETEROJUNCTION/, IEEE electron device letters, 16(11), 1995, pp. 479-481
LOW-FREQUENCY NOISE CHARACTERIZATION OF SELF-ALIGNED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: OUACHA A WILLANDER M PLANA R GRAFFEUIL J ESCOTTE L WILLEN B
Citation: A. Ouacha et al., LOW-FREQUENCY NOISE CHARACTERIZATION OF SELF-ALIGNED INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of applied physics, 78(4), 1995, pp. 2565-2567
LOW-THRESHOLD (1.7MA) AND HIGH-BANDWIDTH (14GHZ) 1.55-MU-M P-SUBSTRATE LASERS USING SEMIINSULATING HVPE REGROWTH
Authors: EVALDSSON P ERIKSSON U STALNACKE B LOURDUDOS S WALLIN J KJEBON O WILLEN B
Citation: P. Evaldsson et al., LOW-THRESHOLD (1.7MA) AND HIGH-BANDWIDTH (14GHZ) 1.55-MU-M P-SUBSTRATE LASERS USING SEMIINSULATING HVPE REGROWTH, Electronics Letters, 31(23), 1995, pp. 2012-2014
INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY/
Authors: WILLEN B ASONEN H TOIVONEN M
Citation: B. Willen et al., INGAAS INP HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Electronics Letters, 31(17), 1995, pp. 1514-1515
APPLICATION OF III-V-SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR-TRANSISTORS TOWARDS MULTI-GBIT S 4/1 MULTIPLEXER/
Authors: SCHUPPENER G WILLEN B MOKHTARI M TENHUNEN H
Citation: G. Schuppener et al., APPLICATION OF III-V-SEMICONDUCTOR BASED HETEROJUNCTION BIPOLAR-TRANSISTORS TOWARDS MULTI-GBIT S 4/1 MULTIPLEXER/, Physica scripta. T, 54, 1994, pp. 46-50
Risultati: 1-9 |