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Results:
1-15
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Results: 15
Authors:
RAO VR
WITTMANN F
GOSSNER H
EISELE I
Citation: Vr. Rao et al., HYSTERESIS BEHAVIOR IN 85-NM CHANNEL-LENGTH VERTICAL N-MOSFETS GROWN BY MBE, I.E.E.E. transactions on electron devices, 43(6), 1996, pp. 973-976
Authors:
WITTMANN F
GOSSNER H
EISELE I
Citation: F. Wittmann et al., SILICON NANOELECTRONIC DEVICES WITH DELTA-DOPED LAYERS, Journal of materials science. Materials in electronics, 6(5), 1995, pp. 336-340
Authors:
STORMER J
WILLUTZKI P
BRITTON DT
KOGEL G
TRIFTSHAUSER W
KIUNKE W
WITTMANN F
EISELE I
Citation: J. Stormer et al., A SLOW POSITRON LIFETIME STUDY OF THE ANNEALING BEHAVIOR OF AN AMORPHOUS-SILICON LAYER GROWN BY MBE, Applied physics A: Materials science & processing, 61(1), 1995, pp. 71-74
Authors:
WITTMANN F
Citation: F. Wittmann, CRITICAL OBSERVATION OF A FRACTURE REDUCT ION IN A SEMIWILD HOUSE CAT- REPLY, Praktische Tierarzt, 76(4), 1995, pp. 383-383
Authors:
WITTMANN F
THAMM B
Citation: F. Wittmann et B. Thamm, FRACTURE TREATMENT IN A HALF-GERAL CAT - A CRITICAL-REVIEW, Praktische Tierarzt, 76(2), 1995, pp. 148-149
FORMATION OF BURIED A-SI AL/SI, A-SI/SB/SI AND A-SI/B/SI INTERFACES AND THEIR ELECTRICAL-PROPERTIES/
Authors:
ZOTOV AV
WITTMANN F
LECHNER J
RYZHKOV SV
LIFSHITS VG
EISELE I
Citation: Av. Zotov et al., FORMATION OF BURIED A-SI AL/SI, A-SI/SB/SI AND A-SI/B/SI INTERFACES AND THEIR ELECTRICAL-PROPERTIES/, Journal of crystal growth, 157(1-4), 1995, pp. 344-348
Authors:
GOSSNER H
WITTMANN F
EISELE I
GRABOLLA T
BEHAMMER D
Citation: H. Gossner et al., VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS, Electronics Letters, 31(16), 1995, pp. 1394-1396
Authors:
ZOTOV AV
WITTMANN F
LECHNER J
EISELE I
RYZHKOV SV
LIFSHITS VG
Citation: Av. Zotov et al., ELECTRICAL-PROPERTIES OF SURFACE PHASES ON SILICON CAPPED BY AMORPHOUS SI LAYERS, Applied physics letters, 67(5), 1995, pp. 611-613
Authors:
BERNHARDHOFER K
ZRENNER A
BRUNNER J
ABSTREITER G
WITTMANN F
EISELE I
Citation: K. Bernhardhofer et al., STRAINED SI1-XGEX MULTIQUANTUM-WELL WAVE-GUIDE STRUCTURES ON (110)SI, Applied physics letters, 66(17), 1995, pp. 2226-2228
Authors:
GOSSNER H
BAUMGARTNER H
HAMMERL E
WITTMANN F
EISELE I
HEINZEL T
LORENZ H
Citation: H. Gossner et al., SELF-ORGANIZING GROWTH OF NANOMETER MESA STRUCTURES ON SILICON (100) SUBSTRATES, JPN J A P 1, 33(4B), 1994, pp. 2268-2271
Authors:
KHAN MS
KAKKAR AK
LONG NJ
LEWIS J
RAITHBY P
NGUYEN P
MARDER TB
WITTMANN F
FRIEND RH
Citation: Ms. Khan et al., SYNTHESIS AND OPTICAL SPECTROSCOPY OF LINEAR LONG-CHAIN DI-TERMINAL ALKYNES AND THEIR PT-SIGMA-ACETYLIDE POLYMERIC COMPLEXES, Journal of materials chemistry, 4(8), 1994, pp. 1227-1232
Authors:
NGUYEN P
TODD S
VANDENBIGGELAAR D
TAYLOR NJ
MARDER TB
WITTMANN F
FRIEND RH
Citation: P. Nguyen et al., FACILE ROUTE TO HIGHLY FLUORESCENT 9,10-BIS(P-R-PHENYLETHYNYL)ANTHRACENE CHROMOPHORES VIA PALLADIUM-COPPER CATALYZED CROSS-COUPLING, Synlett, (4), 1994, pp. 299-301
Authors:
EISELE I
WITTMANN F
LIFSHITS VG
ZOTOV AV
DITINA ZZ
RYZHKOV SV
Citation: I. Eisele et al., TRANSPORT-PROPERTIES OF DELTA-DOPED SISB SUPERLATTICES, Thin solid films, 238(1), 1994, pp. 27-30
Authors:
KHAN MS
KAKKAR AK
INGHAM SL
RAITHBY PR
LEWIS J
SPENCER B
WITTMANN F
FRIEND RH
Citation: Ms. Khan et al., SYNTHESIS AND ELECTRONIC-STRUCTURE OF RIGID-ROD OCTAHEDRAL RU-SIGMA ACETYLIDE COMPLEXES, Journal of organometallic chemistry, 472(1-2), 1994, pp. 247-255
Authors:
HAMMERL E
WITTMANN F
EISELE I
HEINZEL T
KUHN S
LORENZ H
KOTTHAUS JP
Citation: E. Hammerl et al., NANOMETER-SCALE LOCAL EPITAXY WITH SILICON MBE, Journal of crystal growth, 127(1-4), 1993, pp. 447-450
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