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Results: 1-13 |
Results: 13
KINETIC-STUDY OF THE OXIDATION OF GALLIUM NITRIDE IN DRY AIR
Authors: WOLTER SD MOHNEY SE VENUGOPALAN H WICKENDEN AE KOLESKE DD
Citation: Sd. Wolter et al., KINETIC-STUDY OF THE OXIDATION OF GALLIUM NITRIDE IN DRY AIR, Journal of the Electrochemical Society, 145(2), 1998, pp. 629-632
ORIENTED DIAMOND GROWTH ON PLATINUM VIA A METAL-CARBON-HYDROGEN LOW-PRESSURE PROCESSING ROUTE
Authors: CHERIAN KA WOLTER SD ROY R
Citation: Ka. Cherian et al., ORIENTED DIAMOND GROWTH ON PLATINUM VIA A METAL-CARBON-HYDROGEN LOW-PRESSURE PROCESSING ROUTE, DIAMOND AND RELATED MATERIALS, 6(12), 1997, pp. 1747-1752
INTERFACIAL REACTIONS BETWEEN NICKEL THIN-FILMS AND GAN
Authors: VENUGOPALAN HS MOHNEY SE LUTHER BP WOLTER SD REDWING JM
Citation: Hs. Venugopalan et al., INTERFACIAL REACTIONS BETWEEN NICKEL THIN-FILMS AND GAN, Journal of applied physics, 82(2), 1997, pp. 650-654
X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY-DIFFRACTION STUDY OF THE THERMAL OXIDE ON GALLIUM NITRIDE
Authors: WOLTER SD LUTHER BP WALTEMYER DL ONNEBY C MOHNEY SE MOLNAR RJ
Citation: Sd. Wolter et al., X-RAY PHOTOELECTRON-SPECTROSCOPY AND X-RAY-DIFFRACTION STUDY OF THE THERMAL OXIDE ON GALLIUM NITRIDE, Applied physics letters, 70(16), 1997, pp. 2156-2158
HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE
Authors: GLUCHE P WOLTER SD BORST TH EBERT W VESCAN A KOHN E
Citation: P. Gluche et al., HIGHLY RECTIFYING AU-CONTACTS ON DIAMOND-ON-SILICON SUBSTRATE, IEEE electron device letters, 17(6), 1996, pp. 270-272
THE NUCLEATION OF HIGHLY ORIENTED DIAMOND ON SILICON VIA AN ALTERNATING-CURRENT SUBSTRATE BIAS
Authors: WOLTER SD BORST TH VESCAN A KOHN E
Citation: Sd. Wolter et al., THE NUCLEATION OF HIGHLY ORIENTED DIAMOND ON SILICON VIA AN ALTERNATING-CURRENT SUBSTRATE BIAS, Applied physics letters, 68(25), 1996, pp. 3558-3560
FIELD-EMISSION CHARACTERISTICS OF DIAMOND-COATED SILICON FIELD EMITTERS
Authors: LIU J ZHIRNOV VV MYERS AF WOJAK GJ CHOI WB HREN JJ WOLTER SD MCCLURE MT STONER BR GLASS JT
Citation: J. Liu et al., FIELD-EMISSION CHARACTERISTICS OF DIAMOND-COATED SILICON FIELD EMITTERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 422-426
INVESTIGATION OF THE PROCESS FACTOR SPACE ON BIAS-ENHANCED NUCLEATIONOF DIAMOND ON SILICON
Authors: WOLTER SD GLASS JT STONER BR
Citation: Sd. Wolter et al., INVESTIGATION OF THE PROCESS FACTOR SPACE ON BIAS-ENHANCED NUCLEATIONOF DIAMOND ON SILICON, Thin solid films, 261(1-2), 1995, pp. 4-11
IMAGING MATERIAL DEFECTS ON WAFER SURFACES
Authors: WOLTER SD FERRARA MB WELCH KA
Citation: Sd. Wolter et al., IMAGING MATERIAL DEFECTS ON WAFER SURFACES, Solid state technology, 38(10), 1995, pp. 85
BIAS INDUCED DIAMOND NUCLEATION STUDIES ON REFRACTORY-METAL SUBSTRATES
Authors: WOLTER SD GLASS JT STONER BR
Citation: Sd. Wolter et al., BIAS INDUCED DIAMOND NUCLEATION STUDIES ON REFRACTORY-METAL SUBSTRATES, Journal of applied physics, 77(10), 1995, pp. 5119-5124
BIAS-ENHANCED NUCLEATION OF HIGHLY ORIENTED DIAMOND ON TITANIUM CARBIDE (111) SUBSTRATES
Authors: WOLTER SD MCCLURE MT GLASS JT STONER BR
Citation: Sd. Wolter et al., BIAS-ENHANCED NUCLEATION OF HIGHLY ORIENTED DIAMOND ON TITANIUM CARBIDE (111) SUBSTRATES, Applied physics letters, 66(21), 1995, pp. 2810-2812
THE EFFECT OF SUBSTRATE MATERIAL ON BIAS-ENHANCED DIAMOND NUCLEATION
Authors: WOLTER SD STONER BR GLASS JT
Citation: Sd. Wolter et al., THE EFFECT OF SUBSTRATE MATERIAL ON BIAS-ENHANCED DIAMOND NUCLEATION, DIAMOND AND RELATED MATERIALS, 3(9), 1994, pp. 1188-1195
ELECTRON-EMISSION FROM DIAMOND-COATED SILICON FIELD EMITTERS
Authors: LIU J ZHIRNOV VV WOJAK GJ MYERS AF CHOI WB HREN JJ WOLTER SD MCCLURE MT STONER BR GLASS JT
Citation: J. Liu et al., ELECTRON-EMISSION FROM DIAMOND-COATED SILICON FIELD EMITTERS, Applied physics letters, 65(22), 1994, pp. 2842-2844
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