AAAAAA
Results:
1-2
|
Results: 2
Authors:
WORKMAN GO
FOSSUM JG
Citation: Go. Workman et Jg. Fossum, A COMPARATIVE-ANALYSIS OF THE DYNAMIC BEHAVIOR OF BTG SOI MOSFETS ANDCIRCUITS WITH DISTRIBUTED BODY RESISTANCE/, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2138-2145
PHYSICAL MODELING OF TEMPERATURE DEPENDENCES OF SOI CMOS DEVICES AND CIRCUITS INCLUDING SELF-HEATING
Authors:
WORKMAN GO
FOSSUM JG
KRISHNAN S
PELELLA MM
Citation: Go. Workman et al., PHYSICAL MODELING OF TEMPERATURE DEPENDENCES OF SOI CMOS DEVICES AND CIRCUITS INCLUDING SELF-HEATING, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 125-133
Risultati:
1-2
|