Authors: CHANG RD CHOI PS KWONG DL WRISTERS D CHU PK

Citation: Rd. Chang et al., BORON SEGREGATION IN AS-IMPLANTED SI CAUSED BY ELECTRIC-FIELD AND TRANSIENT ENHANCED DIFFUSION, Applied physics letters, 72(14), 1998, pp. 1709-1711

Authors: WRISTERS D HAN LK CHEN T WANG HH KWONG DL ALLEN M FULFORD J

Citation: D. Wristers et al., DEGRADATION OF OXYNITRIDE GATE DIELECTRIC RELIABILITY DUE TO BORON-DIFFUSION, Applied physics letters, 68(15), 1996, pp. 2094-2096

Authors: HAN LK WRISTERS D YAN J BHAT M KWONG DL

Citation: Lk. Han et al., HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(-POLYSILICON GATED MOS DEVICE APPLICATIONS()), IEEE electron device letters, 16(7), 1995, pp. 319-321

Authors: HAN LK BHAT M WRISTERS D WANG HH KWONG DL

Citation: Lk. Han et al., RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 89-96

Authors: BHAT M HAN LK WRISTERS D YAN J KWONG DL FULFORD J

Citation: M. Bhat et al., EFFECTS OF CHEMICAL-COMPOSITION ON THE ELECTRICAL-PROPERTIES OF NO-NITRIDED SIO2, Applied physics letters, 66(10), 1995, pp. 1225-1227