Authors: KUSTERS AM WULLER R GEELEN HJ KOHL A HEIME K

Citation: Am. Kusters et al., SUB-HALF-MICROMETER PSEUDOMORPHIC INP INXGA1-XAS/INP HEMT ESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.81) WITH VERY HIGH F(T) VALUES/, IEEE electron device letters, 16(9), 1995, pp. 396-398

Authors: KUSTERS AM PULS C WULLER R BEHRES A KOHL A SOMMER V HEIME K

Citation: Am. Kusters et al., HIGH-PERFORMANCE AL-FREE IN0.75GA0.25P INP/INXGA1-XAS/INP (X-GREATER-THAN-OR-EQUAL-TO-53-PERCENT) BACKSIDE-DOPED SPLIT-CHANNEL HFETS WITH 0.25-MU-M T-GATES/, Electronics Letters, 31(5), 1995, pp. 409-411

Authors: KUSTERS AM FUNKE T SOMMER V WULLER R BRITTNER S KOHL A HEIME K

Citation: Am. Kusters et al., 0.5 MU-M GATE LENGTH INP IN0.75GA0.25AS/INP PSEUDOMORPHIC HEMT WITH HIGH DC AND RF PERFORMANCE/, Electronics Letters, 29(10), 1993, pp. 841-842