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Results:
1-17
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Results: 17
Authors:
Yoshida, A
Sato, H
Uchida, M
Wakahara, A
Hoshino, A
Machida, H
Citation: A. Yoshida et al., Copper film prepared with ArF excimer laser, APPL SURF S, 169, 2001, pp. 493-495
Authors:
Singh, AV
Mehra, RM
Buthrath, N
Wakahara, A
Yoshida, A
Citation: Av. Singh et al., Highly conductive and transparent aluminum-doped zinc oxide thin films prepared by pulsed laser deposition in oxygen ambient, J APPL PHYS, 90(11), 2001, pp. 5661-5665
Authors:
Wakahara, A
Yamamoto, T
Ishio, K
Yoshida, A
Seki, Y
Kainosho, K
Oda, O
Citation: A. Wakahara et al., Hydride vapor phase epitaxy of GaN on NdGaO3 substrate and realization of freestanding GaN wafers with 2-inch scale, JPN J A P 1, 39(4B), 2000, pp. 2399-2401
Authors:
Oda, O
Inoue, T
Seki, Y
Wakahara, A
Yoshida, A
Kurai, S
Yamada, Y
Taguchi, T
Citation: O. Oda et al., Developments of GaN bulk substrates for GaN based LEDs and LDs, IEICE TR EL, E83C(4), 2000, pp. 639-646
Authors:
Oda, O
Inoue, T
Seki, Y
Kainosho, K
Yaegashi, S
Wakahara, A
Yoshida, A
Kurai, S
Yamada, Y
Taguchi, T
Citation: O. Oda et al., GaN bulk substrates for GaN based LEDs and LDs, PHYS ST S-A, 180(1), 2000, pp. 51-58
Authors:
Wakahara, A
Genba, J
Yoshida, A
Saiki, H
Citation: A. Wakahara et al., Low-temperature growth of GaN by remote-plasma-enhanced organometallic vapor-phase epitaxy, J CRYST GR, 221, 2000, pp. 305-310
Authors:
Tsuchiya, T
Miki, O
Shimada, K
Ohnishi, M
Wakahara, A
Yoshida, A
Citation: T. Tsuchiya et al., Epitaxial growth of InN films on MgAl2O4 (111) substrates, J CRYST GR, 220(3), 2000, pp. 185-190
Initial stages of InN thin film growth onto MgAl2O4(111) and alpha-Al2O3(00 center dot 1) substrates
Authors:
Tsuchiya, T
Ohnishi, M
Wakahara, A
Yoshida, A
Citation: T. Tsuchiya et al., Initial stages of InN thin film growth onto MgAl2O4(111) and alpha-Al2O3(00 center dot 1) substrates, J CRYST GR, 220(3), 2000, pp. 191-196
Authors:
Tanaka, T
Wakahara, A
Yoshida, A
Ohshima, T
Itoh, H
Okada, S
Citation: T. Tanaka et al., Effect of Mg ion implantation on electrical properties of CuInSe2 thin films, J APPL PHYS, 87(7), 2000, pp. 3283-3286
Improvement of the crystalline quality of InN layers grown on sapphire (0001) by surface nitridation
Authors:
Tsuchiya, T
Yamano, H
Miki, O
Wakahara, A
Yoshida, A
Citation: T. Tsuchiya et al., Improvement of the crystalline quality of InN layers grown on sapphire (0001) by surface nitridation, JPN J A P 1, 38(4A), 1999, pp. 1884-1887
Authors:
Yoshida, A
Wakahara, A
Citation: A. Yoshida et A. Wakahara, Zinc oxide films prepared with undulator beam, JPN J A P 1, 38, 1999, pp. 218-221
Authors:
Ohshima, N
Wakahara, A
Ishida, M
Yonezu, H
Yoshida, A
Jung, YC
Miura, H
Citation: N. Ohshima et al., GaN epitaxial growth on a Si(111) substrate using gamma-Al2O3 as an intermediate layer, J KOR PHYS, 34, 1999, pp. S359-S363
Authors:
Furukawa, Y
Noda, S
Ishii, M
Wakahara, A
Sasaki, A
Citation: Y. Furukawa et al., Stacking number dependence of size distribution of vertically stacked InAsGaAs quantum dots, J ELEC MAT, 28(5), 1999, pp. 452-456
Authors:
Yoshida, A
Ouyang, K
Chang, BS
Wakahara, A
Citation: A. Yoshida et al., Epitaxial growth of nitride semiconductor films by laser ablation, THIN SOL FI, 344, 1999, pp. 127-129
Authors:
Tanaka, T
Yamaguchi, T
Wakahara, A
Yoshida, A
Citation: T. Tanaka et al., Effect of substrate temperature on properties of thin films prepared by RFsputtering from CuInSe2 target with Na2Se, THIN SOL FI, 344, 1999, pp. 320-323
Authors:
Ishida, T
Manabe, R
In, Y
Takashima, H
Kitamura, K
Wakahara, A
Citation: T. Ishida et al., Copper(II) ion-catalyzed and molecular packing-dependent dimerization of pyridoxal 5-phosphate-pyridoxamine 5-phosphate Schiff base as a structural model for in vitro transformation of amino acid by pyridoxal 5-phosphate: X-ray crystal structural investigation, B CHEM S J, 72(5), 1999, pp. 947-954
Authors:
Guo, QX
Nishio, M
Ogawa, H
Wakahara, A
Yoshida, A
Citation: Qx. Guo et al., Electronic structure of indium nitride studied by photoelectron spectroscopy, PHYS REV B, 58(23), 1998, pp. 15304-15306
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