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Results:
1-10
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Results: 10
Authors:
Roch, I
Buchaillot, L
Wallart, X
Collard, D
Citation: I. Roch et al., Silicon nitride as an effective protection against oxidation of a TiNi thin film in high temperature oxidizing air environment at atmospheric pressure, J VAC SCI B, 19(1), 2001, pp. 305-307
Authors:
Lefebvre-Devos, I
Lassalle, M
Wallart, X
Olivier-Fourcade, J
Monconduit, LR
Jumas, JC
Citation: I. Lefebvre-devos et al., Bonding in skutterudites: Combined experimental and theoretical characterization of CoSb3 - art. no. 125110, PHYS REV B, 6312(12), 2001, pp. 5110
Authors:
Wallart, X
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Growth of strained Ga1-xInxP layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides, J CRYST GR, 227, 2001, pp. 255-259
Authors:
Wallart, X
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Relationship between surface reconstruction and morphology of strained Ga1-xInxP layers grown on GaP (001) by gas-source molecular-beam epitaxy, APPL PHYS L, 78(19), 2001, pp. 2961-2963
Authors:
Boudart, B
Trassaert, S
Wallart, X
Pesant, JC
Yaradou, O
Theron, D
Crosnier, Y
Lahreche, H
Omnes, F
Citation: B. Boudart et al., Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN, J ELEC MAT, 29(5), 2000, pp. 603-606
Authors:
Wallart, X
Mollot, F
Citation: X. Wallart et F. Mollot, Strained layer growth of Ga1-xInxP on GaAs (100) and GaP (100) substrates, APPL SURF S, 166(1-4), 2000, pp. 446-450
Authors:
Wallart, X
Priester, C
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Interplay between segregation, roughness, and local strains in the growth of Ga0.75In0.25P alloy, APPL PHYS L, 77(2), 2000, pp. 253-255
Authors:
Wallart, X
Schuler, O
Deresmes, D
Mollot, F
Citation: X. Wallart et al., Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers, APPL PHYS L, 76(15), 2000, pp. 2080-2082
Authors:
Schuler, O
Wallart, X
Mollot, F
Citation: O. Schuler et al., A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs, J CRYST GR, 202, 1999, pp. 280-283
Authors:
Duez, V
Vanbesien, O
Lippens, D
Vignaud, D
Wallart, X
Mollot, F
Citation: V. Duez et al., Type II and mixed type I-II radiative recombinations in AlInAs-InP heterostructures, J APPL PHYS, 85(4), 1999, pp. 2202-2206
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