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Results: 1-17 |
Results: 17
Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire
Authors: Lim, SH Washburn, J Liliental-Weber, Z Shindo, D
Citation: Sh. Lim et al., Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire, J VAC SCI A, 19(5), 2001, pp. 2601-2603
Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies
Authors: Liliental-Weber, Z Benamara, M Washburn, J Domagala, JZ Bak-Misiuk, J Piner, EL Roberts, JC Bedair, SM
Citation: Z. Liliental-weber et al., Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies, J ELEC MAT, 30(4), 2001, pp. 439-444
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer
Authors: Bourret-Courchesne, ED Yu, KM Benamara, M Liliental-Weber, Z Washburn, J
Citation: Ed. Bourret-courchesne et al., Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer, J ELEC MAT, 30(11), 2001, pp. 1417-1420
Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation
Authors: Jasinski, J Yu, KM Walukiewicz, W Washburn, J Liliental-Weber, Z
Citation: J. Jasinski et al., Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation, APPL PHYS L, 79(7), 2001, pp. 931-933
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Alohmic contacts to n-AlGaN/GaN
Authors: Lim, SH Washburn, J Liliental-Weber, Z Qiao, D
Citation: Sh. Lim et al., Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Alohmic contacts to n-AlGaN/GaN, APPL PHYS L, 78(24), 2001, pp. 3797-3799
Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD.
Authors: Mazur, JH Benamara, M Liliental-Weber, Z Swider, W Washburn, J Eiting, CJ Dupuis, RD
Citation: Jh. Mazur et al., Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD., MRS I J N S, 5, 2000, pp. NIL_252-NIL_257
The role of the multi buffer layer technique on the structural quality of GaN
Authors: Benamara, M Liliental-Weber, Z Mazur, JH Swider, W Washburn, J Iwaya, M Akasaki, I Amano, H
Citation: M. Benamara et al., The role of the multi buffer layer technique on the structural quality of GaN, MRS I J N S, 5, 2000, pp. NIL_341-NIL_346
Mg segregation, difficulties of P-doping in GaN
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Mg segregation, difficulties of P-doping in GaN, MRS I J N S, 5, 2000, pp. NIL_430-NIL_435
Violence prevention: Program effects on urban preschool and kindergarten children
Authors: McMahon, SD Washburn, J Felix, ED Yakin, J Childrey, G
Citation: Sd. Mcmahon et al., Violence prevention: Program effects on urban preschool and kindergarten children, APPL PREV P, 9(4), 2000, pp. 271-281
Transition thickness of semiconductor heteroepitaxy
Authors: Sasaki, A Weber, ER Liliental-Weber, Z Ruvimov, S Washburn, J Nabetani, Y
Citation: A. Sasaki et al., Transition thickness of semiconductor heteroepitaxy, THIN SOL FI, 367(1-2), 2000, pp. 277-280
Study of high-quality GaN grown by OMVPE using an intermediate layer
Authors: Benamara, M Liliental-Weber, Z Kellermann, S Swider, W Washburn, J Mazur, J Bourret-Courchesne, ED
Citation: M. Benamara et al., Study of high-quality GaN grown by OMVPE using an intermediate layer, J CRYST GR, 218(2-4), 2000, pp. 447-450
Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN
Authors: Lim, SH Swider, W Washburn, J Liliental-Weber, Z
Citation: Sh. Lim et al., Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN, J APPL PHYS, 88(11), 2000, pp. 6364-6368
Reduction of threading dislocation density in GaN using an intermediate temperature interlayer
Authors: Bourret-Courchesne, ED Kellermann, S Yu, KM Benamara, M Liliental-Weber, Z Washburn, J Irvine, SJC Stafford, A
Citation: Ed. Bourret-courchesne et al., Reduction of threading dislocation density in GaN using an intermediate temperature interlayer, APPL PHYS L, 77(22), 2000, pp. 3562-3564
Ordering in bulk GaN : Mg samples: defects caused by Mg doping
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Dupuis, RD Eiting, CJ
Citation: Z. Liliental-weber et al., Ordering in bulk GaN : Mg samples: defects caused by Mg doping, PHYSICA B, 274, 1999, pp. 124-129
Spontaneous ordering in bulk GaN : Mg samples
Authors: Liliental-Weber, Z Benamara, M Washburn, J Grzegory, I Porowski, S
Citation: Z. Liliental-weber et al., Spontaneous ordering in bulk GaN : Mg samples, PHYS REV L, 83(12), 1999, pp. 2370-2373
Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs
Authors: Maltez, RL Liliental-Weber, Z Washburn, J Behar, M Klein, PB Specht, P Weber, ER
Citation: Rl. Maltez et al., Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs, J APPL PHYS, 85(2), 1999, pp. 1105-1113
Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition
Authors: Liliental-Weber, Z Benamara, M Swider, W Washburn, J Grzegory, I Porowski, S Lambert, DJH Eiting, CJ Dupuis, RD
Citation: Z. Liliental-weber et al., Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition, APPL PHYS L, 75(26), 1999, pp. 4159-4161
Risultati: 1-17 |