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Citation: A. Weimar et al., Investigation of low-resistance metal contacts on p-type GaN using the linear and circular transmission line method, PHYS ST S-A, 183(1), 2001, pp. 169-175

Authors: Zehnder, U Weimar, A Strauss, U Fehrer, M Hahn, B Lugauer, HJ Harle, V

Citation: U. Zehnder et al., Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates, J CRYST GR, 230(3-4), 2001, pp. 497-502

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Citation: V. Schwegler et al., GaN-based lasers on SiC: influence of mirror reflectivity on L-I characteristics, J CRYST GR, 230(3-4), 2001, pp. 512-516

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Citation: M. Vehse et al., Optical gain and saturation in nitride-based laser structures, APPL PHYS L, 79(12), 2001, pp. 1763-1765

Authors: Bader, S Hahn, B Lugauer, HJ Lell, A Weimar, A Bruderl, G Baur, J Eisert, D Scheubeck, M Heppel, S Hangleiter, A Harle, V

Citation: S. Bader et al., First European GaN-based violet laser diode, PHYS ST S-A, 180(1), 2000, pp. 177-182