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Results: 1-8 |
Results: 8
Effects of confinement on the coupling between nitrogen and band states inInGaAs1-xNx/GaAs (x <= 0.025) structures: Pressure and temperature studies
Authors: Choulis, SA Weinstein, BA Hosea, TJC Kamal-Saadi, M O'Reilly, EP Adams, AR Stolz, W
Citation: Sa. Choulis et al., Effects of confinement on the coupling between nitrogen and band states inInGaAs1-xNx/GaAs (x <= 0.025) structures: Pressure and temperature studies, PHYS ST S-B, 223(1), 2001, pp. 151-156
Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure - art. no. 161201
Authors: Kuskovsky, IL Neumark, GF Tischler, JG Weinstein, BA
Citation: Il. Kuskovsky et al., Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure - art. no. 161201, PHYS REV B, 6316(16), 2001, pp. 1201
High-pressure studies of semiconductors in the far-infrared: Donor states in quasi-2D
Authors: Weinstein, BA Tischler, JG Chen, RJ Nickel, HA McCombe, BD Dzyubenko, AB Sivachenko, A
Citation: Ba. Weinstein et al., High-pressure studies of semiconductors in the far-infrared: Donor states in quasi-2D, ACT PHY P A, 98(3), 2000, pp. 241-257
Spectroscopy of charged donors and many-electron effects in semiconductor quantum wells
Authors: McCombe, BD Jiang, ZX Tischler, JG Weinstein, BA Hawrylak, P
Citation: Bd. Mccombe et al., Spectroscopy of charged donors and many-electron effects in semiconductor quantum wells, ACT PHY P A, 96(5), 1999, pp. 559-572
Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures
Authors: Tischler, JG Weinstein, BA McCombe, BD
Citation: Jg. Tischler et al., Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures, PHYS ST S-B, 215(1), 1999, pp. 263-267
Energy level alignments in strained-layer GaInP/AlGaInP laser diodes: Model solid theory analysis of pressure-photoluminescence experiments
Authors: Ritter, TM Weinstein, BA Viturro, RE Bour, DP
Citation: Tm. Ritter et al., Energy level alignments in strained-layer GaInP/AlGaInP laser diodes: Model solid theory analysis of pressure-photoluminescence experiments, PHYS ST S-B, 211(2), 1999, pp. 869-883
Pitfalls of using pressure to assign the luminescence of large-lattice-relaxation defects
Authors: Iota, V Weinstein, BA
Citation: V. Iota et Ba. Weinstein, Pitfalls of using pressure to assign the luminescence of large-lattice-relaxation defects, PHYS ST S-B, 211(1), 1999, pp. 91-104
Pressure tuning of many-electron impurity interactions in confined semiconductor structures
Authors: Tischler, JG Singh, SK Nickel, HA Herold, GS Jiang, ZX McCombe, BD Weinstein, BA
Citation: Jg. Tischler et al., Pressure tuning of many-electron impurity interactions in confined semiconductor structures, PHYS ST S-B, 211(1), 1999, pp. 131-136
Risultati: 1-8 |