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Choulis, SA
Weinstein, BA
Hosea, TJC
Kamal-Saadi, M
O'Reilly, EP
Adams, AR
Stolz, W
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Authors:
Kuskovsky, IL
Neumark, GF
Tischler, JG
Weinstein, BA
Citation: Il. Kuskovsky et al., Resonant donor defect as a cause of compensation in p-type ZnSe: Photoluminescence studies under hydrostatic pressure - art. no. 161201, PHYS REV B, 6316(16), 2001, pp. 1201
Authors:
Weinstein, BA
Tischler, JG
Chen, RJ
Nickel, HA
McCombe, BD
Dzyubenko, AB
Sivachenko, A
Citation: Ba. Weinstein et al., High-pressure studies of semiconductors in the far-infrared: Donor states in quasi-2D, ACT PHY P A, 98(3), 2000, pp. 241-257
Authors:
McCombe, BD
Jiang, ZX
Tischler, JG
Weinstein, BA
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Citation: Bd. Mccombe et al., Spectroscopy of charged donors and many-electron effects in semiconductor quantum wells, ACT PHY P A, 96(5), 1999, pp. 559-572
Citation: Jg. Tischler et al., Pressure tuning of competing charged and neutral exciton states in quasi-2D semiconductor structures, PHYS ST S-B, 215(1), 1999, pp. 263-267
Authors:
Ritter, TM
Weinstein, BA
Viturro, RE
Bour, DP
Citation: Tm. Ritter et al., Energy level alignments in strained-layer GaInP/AlGaInP laser diodes: Model solid theory analysis of pressure-photoluminescence experiments, PHYS ST S-B, 211(2), 1999, pp. 869-883
Citation: V. Iota et Ba. Weinstein, Pitfalls of using pressure to assign the luminescence of large-lattice-relaxation defects, PHYS ST S-B, 211(1), 1999, pp. 91-104
Authors:
Tischler, JG
Singh, SK
Nickel, HA
Herold, GS
Jiang, ZX
McCombe, BD
Weinstein, BA
Citation: Jg. Tischler et al., Pressure tuning of many-electron impurity interactions in confined semiconductor structures, PHYS ST S-B, 211(1), 1999, pp. 131-136