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Results: 1-7 |
Results: 7

Authors: Yoo, K Weitering, HH
Citation: K. Yoo et Hh. Weitering, Surface conductance of Si(100)2 x 1 and Si(111)7 x 7, SURF SCI, 482, 2001, pp. 482-487

Authors: Yoo, K Weitering, HH
Citation: K. Yoo et Hh. Weitering, Surface conductance near the order-disorder phase transition on Si(100) - art. no. 026802, PHYS REV L, 8702(2), 2001, pp. 6802-NIL_80

Authors: Melechko, AV Braun, J Weitering, HH Plummer, EW
Citation: Av. Melechko et al., Role of defects in two-dimensional phase transitions: An STM study of the Sn/Ge(111) system, PHYS REV B, 61(3), 2000, pp. 2235-2245

Authors: Noh, M Jellison, GE Namavar, F Weitering, HH
Citation: M. Noh et al., Isolation of a metallic Si(111)7x7 surface reconstruction via separation by implanted oxygen, APPL PHYS L, 76(6), 2000, pp. 733-735

Authors: Stumpf, RR Carpinelli, JM Weitering, HH
Citation: Rr. Stumpf et al., Apparent charge transfer at the GexPb1-x/Ge(111) interface, PHYS REV B, 59(24), 1999, pp. 15779-15783

Authors: Weitering, HH Carpinelli, JM Melechko, AP Zhang, JD Bartkowiak, M Plummer, EW
Citation: Hh. Weitering et al., Defect-mediated condensation of a charge density wave, SCIENCE, 285(5436), 1999, pp. 2107-2110

Authors: Melechko, AV Braun, J Weitering, HH Plummer, EW
Citation: Av. Melechko et al., Two-dimensional phase transition mediated by extrinsic defects, PHYS REV L, 83(5), 1999, pp. 999-1002
Risultati: 1-7 |