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Results: 1-9 |
Results: 9
Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on InP surfaces
Authors: Borgstrom, M Bryllert, T Gustafson, B Johansson, J Sass, T Wernersson, LE Seifert, W Samuelson, L
Citation: M. Borgstrom et al., Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on InP surfaces, J ELEC MAT, 30(5), 2001, pp. 482-486
Facet formation and overgrowth of sub-mu m W-patterns on GaAs(001) surfaces
Authors: Jarlskog, L Wernersson, LE Borgstrom, M Seifert, W Samuelson, L
Citation: L. Jarlskog et al., Facet formation and overgrowth of sub-mu m W-patterns on GaAs(001) surfaces, J CRYST GR, 222(3), 2001, pp. 534-537
High peak-to-valley ratios observed in InAs/InP resonant tunneling quantumdot stacks
Authors: Borgstrom, M Bryllert, T Sass, T Gustafson, B Wernersson, LE Seifert, W Samuelson, L
Citation: M. Borgstrom et al., High peak-to-valley ratios observed in InAs/InP resonant tunneling quantumdot stacks, APPL PHYS L, 78(21), 2001, pp. 3232-3234
Simulation of interference patterns in solid-state biprism devices
Authors: Hansson, BAM Machida, N Furuya, K Wernersson, LE Samuelson, L
Citation: Bam. Hansson et al., Simulation of interference patterns in solid-state biprism devices, SOL ST ELEC, 44(7), 2000, pp. 1275-1280
MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices
Authors: Wernersson, LE Borgstrom, M Gustafson, B Gustafsson, A Jarlskog, L Malm, JO Litwin, A Samuelson, L Seifert, W
Citation: Le. Wernersson et al., MOVPE overgrowth of metallic features for realisation of 3D metal-semiconductor quantum devices, J CRYST GR, 221, 2000, pp. 704-712
Ultrafast carrier dynamics around nanoscale Schottky contacts studied by femtosecond far- and near-field optics
Authors: Achermann, M Siegner, U Wernersson, LE Keller, U
Citation: M. Achermann et al., Ultrafast carrier dynamics around nanoscale Schottky contacts studied by femtosecond far- and near-field optics, APPL PHYS L, 77(21), 2000, pp. 3370-3372
Gated tunneling structures with buried tungsten grating adjacent to semiconductor heterostructures
Authors: Suhara, M Wernersson, LE Gustafson, B Carlsson, N Seifert, W Gustafsson, A Malm, JO Litwin, A Samuelson, L Furuya, K
Citation: M. Suhara et al., Gated tunneling structures with buried tungsten grating adjacent to semiconductor heterostructures, JPN J A P 1, 38(6A), 1999, pp. 3466-3469
Novel approach for lateral current confinement in vertical resonant tunneling devices
Authors: Gustafson, B Carlsson, N Fukui, T Litwin, A Maximov, I Sarwe, EL Seifert, W Wernersson, LE Samuelson, L
Citation: B. Gustafson et al., Novel approach for lateral current confinement in vertical resonant tunneling devices, JPN J A P 1, 38(1B), 1999, pp. 343-346
Lateral confinement in a resonant tunneling transistor with a buried metallic gate
Authors: Wernersson, LE Suhara, M Carlsson, N Furuya, K Gustafson, B Litwin, A Samuelson, L Seifert, W
Citation: Le. Wernersson et al., Lateral confinement in a resonant tunneling transistor with a buried metallic gate, APPL PHYS L, 74(2), 1999, pp. 311-313
Risultati: 1-9 |