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Results: 26-31/31
Authors:
Zettler, JT
Haberland, K
Zorn, M
Pristovsek, M
Richter, W
Kurpas, P
Weyers, M
Citation: Jt. Zettler et al., Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques, J CRYST GR, 195(1-4), 1998, pp. 151-162
Authors:
Kurpas, P
Arens, M
Gutsche, D
Richter, E
Weyers, M
Citation: P. Kurpas et al., Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy, J CRYST GR, 195(1-4), 1998, pp. 217-222
Authors:
Zorn, M
Trepk, T
Kurpas, P
Weyers, M
Zettler, JT
Richter, W
Citation: M. Zorn et al., In situ monitoring and control of InGaP growth on GaAs in MOVPE, J CRYST GR, 195(1-4), 1998, pp. 223-227
Authors:
Hofmann, L
Knauer, A
Rechenberg, I
Weyers, M
Citation: L. Hofmann et al., Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE), J CRYST GR, 195(1-4), 1998, pp. 485-489
Authors:
Bugge, F
Knauer, A
Zeimer, U
Sebastian, J
Smirnitski, VB
Klehr, A
Erbert, G
Weyers, M
Citation: F. Bugge et al., MOVPE growth of tunable DBR laser diode emitting at 1060 nm, J CRYST GR, 195(1-4), 1998, pp. 676-680
Authors:
Knauer, A
Oelgart, G
Oster, A
Gramlich, S
Bugge, F
Weyers, M
Citation: A. Knauer et al., Ordering in GaxIn1-xAsyP1-y grown on GaAs by metalorganic vapour-phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 694-699