Authors:
Zhang, YW
Possnert, G
Jonsson, L
Winzell, T
Whitlow, HJ
Citation: Yw. Zhang et al., Characterisation of compact discs using time of flight-energy elastic recoil detection analysis, JPN J A P 1, 40(2A), 2001, pp. 629-633
Authors:
Winzell, T
Maximov, I
Landin, L
Zhang, Y
Gustafsson, A
Samuelson, L
Whitlow, HJ
Citation: T. Winzell et al., Bandgap modification in GaInAs/InP quantum well structures using switched ion channelling lithography, SEMIC SCI T, 16(11), 2001, pp. 889-894
Citation: Yw. Zhang et al., Measurements of the mean energy-loss of swift heavy ions in carbon with high precision, NUCL INST B, 183(1-2), 2001, pp. 34-47
Authors:
Persson, L
Whitlow, HJ
El Bouanani, M
Hult, M
Andersson, M
Bubb, IF
Cohen, DD
Dytlewski, N
Johnston, PN
Walker, SR
Zaring, C
Ostling, M
Citation: L. Persson et al., Separation of mass-overlapped time of flight-energy elastic recoil detection analysis data using Ryan and Jamieson's dynamic analysis method, NUCL INST B, 179(3), 2001, pp. 403-411
Authors:
Winzell, T
Pejnefors, J
Elfman, M
Ostling, M
Whitlow, HJ
Citation: T. Winzell et al., Scanning mu-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films, NUCL INST B, 179(1), 2001, pp. 121-125
Authors:
Zhang, YW
Zhang, TH
Lu, DT
Maximov, IA
Sarwe, EL
Graczyk, M
Whitlow, HJ
Citation: Yw. Zhang et al., Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures, NUCL INST B, 175, 2001, pp. 737-743
Citation: Yw. Zhang et al., Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si, NUCL INST B, 173(4), 2001, pp. 427-435
Authors:
Winzell, T
Anand, S
Maximov, I
Sarwe, EL
Graczyk, M
Montelius, L
Whitlow, HJ
Citation: T. Winzell et al., Scanning probe microscopy characterisation of masked low energy implanted nanometer structures, NUCL INST B, 173(4), 2001, pp. 447-454
Authors:
Martensson, J
Berg, M
Carlen, L
Elmer, R
Fokin, A
Ghetti, R
Jakobsson, B
Noren, B
Oskarsson, A
Whitlow, HJ
Ekstrom, C
Ericsson, G
Romanski, J
van Veldhuizen, EJ
Westerberg, L
Julien, J
Nybo, K
Thorsteinsen, TF
Amirelmi, S
Guttormsen, M
Lovhoiden, G
Bellini, V
Palazzolo, F
Sperduto, ML
Sutera, C
Avdeichikov, V
Kuznetsov, A
Murin, Y
Citation: J. Martensson et al., Pion production excitation functions in proton-nucleus collisions from theabsolute threshold to 500 MeV - art. no. 014610, PHYS REV C, 6201(1), 2000, pp. 4610
Authors:
Kuznetsov, AV
van Veldhuizen, EJ
Westerberg, L
Lyapin, VG
Aleklett, K
Loveland, W
Bondorf, J
Jakobsson, B
Whitlow, HJ
El Bouanani, M
Citation: Av. Kuznetsov et al., A compact Ultra-High Vacuum (UHV) compatible instrument for time of flight-energy measurements of slow heavy reaction products, NUCL INST A, 452(3), 2000, pp. 525-532
Authors:
Whitlow, HJ
Zhang, YW
Timmers, H
Ophel, TR
Elliman, RG
Li, MM
O'Connor, DJ
Citation: Hj. Whitlow et al., Correlation of energy-loss and collected-charge in Si Delta E detectors: Measurements using an Enge spectrometer, NUCL INST B, 164, 2000, pp. 186-190
Citation: Yw. Zhang et al., Influence of heavy ion irradiation damage on silicon charged particle detector calibration, NUCL INST B, 161, 2000, pp. 297-301
Citation: T. Winzell et al., Analysis of ferromagnetic removable hard disc media ageing by time of flight-energy elastic recoil detection analysis, NUCL INST B, 161, 2000, pp. 558-562
Authors:
Zhang, YW
Winzell, T
Zhang, TH
Maximov, IA
Sarwe, EL
Graczyk, M
Montelius, L
Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium, NUCL INST B, 159(3), 1999, pp. 133-141
Authors:
Zhang, YW
Winzell, T
Zhang, TH
Andersson, M
Maximov, IA
Sarwe, EL
Graczyk, M
Montelius, L
Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formationof thin silicide surface films, NUCL INST B, 159(3), 1999, pp. 142-157
Authors:
Zhang, YW
Winzell, T
Zhang, TH
Maximov, IA
Sarwe, EL
Graczyk, M
Montelius, L
Whitlow, HJ
Citation: Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development, NUCL INST B, 159(3), 1999, pp. 158-165
Authors:
Zhang, YW
Elfman, M
Winzell, T
Whitlow, HJ
Citation: Yw. Zhang et al., Characterisation of ferromagnetic magnetic storage media surfaces by complementary particle induced X-ray analysis and time of flight-energy dispersive elastic recoil detection analysis, NUCL INST B, 150(1-4), 1999, pp. 548-553