Authors: Widdershoven, FP

Citation: Fp. Widdershoven, Extraction of gate oxide thickness from C-V measurements, MICROEL ENG, 59(1-4), 2001, pp. 271-275

Authors: O'Sullivan, BJ Hurley, PK Cubaynes, FN Stolk, PA Widdershoven, FP

Citation: Bj. O'Sullivan et al., Flat band voltage shift and oxide properties after rapid thermal annealing, MICROEL REL, 41(7), 2001, pp. 1053-1056

Authors: Houtsma, VE Holleman, J Salm, C Widdershoven, FP Woerlee, PH

Citation: Ve. Houtsma et al., Stress-induced leakage current in p(+) poly MOS capacitors with poly-Si and Poly-Si0.7Ge0.3 gate material, IEEE ELEC D, 20(7), 1999, pp. 314-316