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Results: 1-9 |
Results: 9
Angular dispersion of polar phonons in a hexagonal GaN-AlN superlattice
Authors: Gleize, J Frandon, J Demangeot, F Renucci, MA Kuball, M Hayes, JM Widmann, F Daudin, B
Citation: J. Gleize et al., Angular dispersion of polar phonons in a hexagonal GaN-AlN superlattice, MAT SCI E B, 82(1-3), 2001, pp. 27-29
Structural and optical properties of self-assembled GaN/AlN quantum dots
Authors: Adelmann, C Arlery, M Daudin, B Feuillet, G Fishman, G Dang, LS Mariette, H Pelekanos, N Rouviere, JL Simon, J Widmann, F
Citation: C. Adelmann et al., Structural and optical properties of self-assembled GaN/AlN quantum dots, CR AC S IV, 1(1), 2000, pp. 61-69
Self organization of nitride quantum dots by molecular beam epitaxy
Authors: Daudin, B Widmann, F Feuillet, G Samson, Y Rouviere, JL Pelekanos, N
Citation: B. Daudin et al., Self organization of nitride quantum dots by molecular beam epitaxy, MAT SCI E B, 59(1-3), 1999, pp. 330-334
Raman scattering in GaN/AlN quantum dot structures
Authors: Gleize, J Demangeot, F Frandon, J Renucci, MA Kuball, M Widmann, F Daudin, B
Citation: J. Gleize et al., Raman scattering in GaN/AlN quantum dot structures, PHYS ST S-B, 216(1), 1999, pp. 457-460
Giant piezoelectric effect in GaN self-assembled quantum dots
Authors: Widmann, F Simon, J Pelekanos, NT Daudin, B Feuillet, G Rouviere, JL Fishman, G
Citation: F. Widmann et al., Giant piezoelectric effect in GaN self-assembled quantum dots, MICROELEC J, 30(4-5), 1999, pp. 353-356
Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy
Authors: Widmann, F Feuillet, G Daudin, B Rouviere, JL
Citation: F. Widmann et al., Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy, J APPL PHYS, 85(3), 1999, pp. 1550-1555
Phonons in a strained hexagonal GaN-AlN superlattice
Authors: Gleize, J Demangeot, F Frandon, J Renucci, MA Widmann, F Daudin, B
Citation: J. Gleize et al., Phonons in a strained hexagonal GaN-AlN superlattice, APPL PHYS L, 74(5), 1999, pp. 703-705
Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy
Authors: Arlery, M Rouviere, JL Widmann, F Daudin, B Feuillet, G Mariette, H
Citation: M. Arlery et al., Quantitative characterization of GaN quantum-dot structures in AlN by high-resolution transmission electron microscopy, APPL PHYS L, 74(22), 1999, pp. 3287-3289
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
Authors: Widmann, F Simon, J Daudin, B Feuillet, G Rouviere, JL Pelekanos, NT Fishman, G
Citation: F. Widmann et al., Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect, PHYS REV B, 58(24), 1998, pp. R15989-R15992
Risultati: 1-9 |