Authors:
Miller, EJ
Dang, XZ
Wieder, HH
Asbeck, PM
Yu, ET
Sullivan, GJ
Redwing, JM
Citation: Ej. Miller et al., Trap characterization by gate-drain conductance and capacitance dispersionstudies of an AlGaN/GaN heterostructure field-effect transistor, J APPL PHYS, 87(11), 2000, pp. 8070-8073
Citation: Hh. Wieder et H. Sari, DX centers in Al0.37Ga0.63As/GaAs and In0.34Al0.66As/In0.36Ga0.64As heterostructures, J VAC SCI B, 17(4), 1999, pp. 1761-1766