Authors: Affentauschegg, C Wieder, HH

Citation: C. Affentauschegg et Hh. Wieder, Properties of InAs/InAlAs heterostructures, SEMIC SCI T, 16(8), 2001, pp. 708-714

Authors: Miller, EJ Dang, XZ Wieder, HH Asbeck, PM Yu, ET Sullivan, GJ Redwing, JM

Citation: Ej. Miller et al., Trap characterization by gate-drain conductance and capacitance dispersionstudies of an AlGaN/GaN heterostructure field-effect transistor, J APPL PHYS, 87(11), 2000, pp. 8070-8073

Authors: Affentauschegg, C Wieder, HH

Citation: C. Affentauschegg et Hh. Wieder, Accumulation and depletion in InAs epilayers, ELECTR LETT, 36(7), 2000, pp. 672-673

Authors: Wieder, HH Sari, H

Citation: Hh. Wieder et H. Sari, DX centers in Al0.37Ga0.63As/GaAs and In0.34Al0.66As/In0.36Ga0.64As heterostructures, J VAC SCI B, 17(4), 1999, pp. 1761-1766

Authors: Sari, H Wieder, HH

Citation: H. Sari et Hh. Wieder, DX centers in InxAl1-xAs, J APPL PHYS, 85(6), 1999, pp. 3380-3382