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Results:
1-9
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Results: 9
Authors:
Sedky, S
Witvrouw, A
Saerens, A
Van Houtte, P
Poortmans, J
Baert, K
Citation: S. Sedky et al., Effect of in situ boron doping on properties of silicon germanium films deposited by chemical vapor deposition at 400 degrees C, J MATER RES, 16(9), 2001, pp. 2607-2612
Authors:
Sedky, S
Witvrouw, A
Bender, H
Baert, K
Citation: S. Sedky et al., Experimental determination of the maximum post-process annealing temperature for standard CMOS wafers, IEEE DEVICE, 48(2), 2001, pp. 377-385
Authors:
Witvrouw, A
Van Steenkiste, F
Maes, D
Haspeslagh, L
Van Gerwen, P
De Moor, P
Sedky, S
Van Hoof, C
de Vries, AC
Verbist, A
De Caussemaeker, A
Parmentier, B
Baert, K
Citation: A. Witvrouw et al., Why CMOS-integrated transducers? A review, MICROSYST T, 6(5), 2000, pp. 192-199
Authors:
Heyvaert, I
Van Hove, M
Witvrouw, A
Maex, K
Saerens, A
Roussel, P
Bender, H
Citation: I. Heyvaert et al., Effect of oxide and W-CMP on the material properties and electromigration behaviour of layered aluminum metallisations, MICROEL ENG, 50(1-4), 2000, pp. 291-299
Authors:
Gao, T
Witvrouw, A
Coenegrachts, B
Bruynseraede, C
Van Hove, M
Maex, K
Citation: T. Gao et al., Integration of HSQ in the direct-on-metal approach for 0.25-mu m technology, MICROEL ENG, 50(1-4), 2000, pp. 349-355
Authors:
Proost, J
Witvrouw, A
Maex, K
D'Haen, J
Cosemans, P
Citation: J. Proost et al., Electromigration-induced drift in damascene and plasma-etched Al(Cu). I. Kinetics of Cu depletion in polycrystalline interconnects, J APPL PHYS, 87(1), 2000, pp. 86-98
Authors:
Witvrouw, A
Proost, J
Roussel, P
Cosemans, P
Maex, K
Citation: A. Witvrouw et al., Stress relaxation in Al-Cu and Al-Si-Cu thin films, J MATER RES, 14(4), 1999, pp. 1246-1254
Authors:
Witvrouw, A
Bender, H
Roussel, P
Maex, K
Citation: A. Witvrouw et al., Modeling and microstructural characterization of incubation, time-dependent drift and saturation during electromigration in Al-Si-Cu stripes, MICROEL REL, 39(11), 1999, pp. 1603-1616
Authors:
Van Olmen, J
Manca, JV
De Ceuninck, W
De Schepper, L
D'Haeger, V
Witvrouw, A
Maex, K
Vandevelde, B
Beyne, E
Tielemans, L
Citation: J. Van Olmen et al., The kinetics of the early stages of electromigration and concurrent temperature induced processes in thin film metallisations studied by means of an in-situ high resolution resistometric technique, MICROEL REL, 39(11), 1999, pp. 1657-1665
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1-9
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