ACNP - Italian Periodicals Catalogue

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Results: 1-10 |

Results: 10

High performance InP high electron mobility transistors by valved phosphorus cracker

Authors: Chin, TP Chen, YC Barsky, M Wojtowicz, M Grundbacher, R Lai, R Streit, DC Block, TR

Citation: Tp. Chin et al., High performance InP high electron mobility transistors by valved phosphorus cracker, J VAC SCI B, 18(3), 2000, pp. 1642-1644

Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers

Authors: Goorsky, MS Sandhu, R Hsing, R Naidenkova, M Wojtowicz, M Chin, TP Block, TR Streit, DC

Citation: Ms. Goorsky et al., Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, J VAC SCI B, 18(3), 2000, pp. 1658-1662

Investigation of flicker noise and deep-levels in GaN/AlGaN transistors

Authors: Balandin, A Wang, KL Cai, S Li, R Viswanathan, CR Wang, EN Wojtowicz, M

Citation: A. Balandin et al., Investigation of flicker noise and deep-levels in GaN/AlGaN transistors, J ELEC MAT, 29(3), 2000, pp. 297-301

Beardon's diophantine equations and non-free Mobius groups

Authors: Grytczuk, A Wojtowicz, M

Citation: A. Grytczuk et M. Wojtowicz, Beardon's diophantine equations and non-free Mobius groups, B LOND MATH, 32, 2000, pp. 305-310

Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

Authors: Chen, TH Huang, YS Lin, DY Pollak, FH Goorsky, MS Streit, DC Wojtowicz, M

Citation: Th. Chen et al., Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation, J APPL PHYS, 88(2), 2000, pp. 883-888

The Sobczyk property and copies of l(infinity) in locally convex-solid Riesz spaces

Authors: Wojtowicz, M

Citation: M. Wojtowicz, The Sobczyk property and copies of l(infinity) in locally convex-solid Riesz spaces, ARCH MATH, 75(5), 2000, pp. 376-379

Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs

Authors: Sandhu, RS Bhasin, G Moore, CD U'Ren, GD Goorsky, MS Chin, TP Wojtowicz, M Block, TR Streit, DC

Citation: Rs. Sandhu et al., Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs, J VAC SCI B, 17(3), 1999, pp. 1163-1166

There are no small odd perfect numbers

Authors: Grytczuk, A Wojtowicz, M

Citation: A. Grytczuk et M. Wojtowicz, There are no small odd perfect numbers, CR AC S I, 328(12), 1999, pp. 1101-1105

Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence

Authors: Han, AC Wojtowicz, M Block, TR Zhang, X Chin, TP Cavus, A Oki, A Streit, DC

Citation: Ac. Han et al., Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence, J APPL PHYS, 86(11), 1999, pp. 6160-6163

Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor

Authors: Mishori, B Leibovitch, M Shapira, Y Pollak, FH Streit, DC Wojtowicz, M

Citation: B. Mishori et al., Surface photovoltage spectroscopy of a GaAs/AlGaAs heterojunction bipolar transistor, APPL PHYS L, 73(5), 1999, pp. 650-652

Risultati: 1-10 |