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Results: 1-13 |
Results: 13
Recent progress and current issues in SiC semiconductor devices for power applications
Authors: Johnson, CM Wright, NG Uren, MJ Hilton, KP Rahimo, M Hinchley, DA Knights, AP Morrison, DJ Horsfall, AB Ortolland, S O'Neill, AG
Citation: Cm. Johnson et al., Recent progress and current issues in SiC semiconductor devices for power applications, IEE P-CIRC, 148(2), 2001, pp. 101-108
Development and validation of a non-linear k-epsilon: model for flow over a full-scale building
Authors: Wright, NG Easom, GJ Hoxey, RJ
Citation: Ng. Wright et al., Development and validation of a non-linear k-epsilon: model for flow over a full-scale building, WIND STRUCT, 4(3), 2001, pp. 177-196
The slipstream and wake of a high-speed train
Authors: Baker, CJ Dalley, SJ Johnson, T Quinn, A Wright, NG
Citation: Cj. Baker et al., The slipstream and wake of a high-speed train, P I MEC E F, 215(2), 2001, pp. 83-99
Wind and vehicle induced forces on flat plates - Part 1: wind induced force
Authors: Quinn, AD Baker, CJ Wright, NG
Citation: Ad. Quinn et al., Wind and vehicle induced forces on flat plates - Part 1: wind induced force, J WIND ENG, 89(9), 2001, pp. 817-829
Wind and vehicle induced forces on flat plates - Part 2: vehicle induced force
Authors: Quinn, AD Baker, CJ Wright, NG
Citation: Ad. Quinn et al., Wind and vehicle induced forces on flat plates - Part 2: vehicle induced force, J WIND ENG, 89(9), 2001, pp. 831-847
Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC
Authors: Morrison, DJ Pidduck, AJ Moore, V Wilding, PJ Hilton, KP Uren, MJ Johnson, CM Wright, NG O'Neill, AG
Citation: Dj. Morrison et al., Surface preparation for Schottky metal-4H-SiC contacts formed on plasma-etched SiC, SEMIC SCI T, 15(12), 2000, pp. 1107-1114
Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation
Authors: Morrison, DJ Wright, NG Horsfall, AB Johnson, CM O'Neill, AG Knights, AP Hilton, KP Uren, MJ
Citation: Dj. Morrison et al., Effect of post-implantation anneal on the electrical characteristics of Ni4H-SiC Schottky barrier diodes terminated using self-aligned argon ion implantation, SOL ST ELEC, 44(11), 2000, pp. 1879-1885
Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation
Authors: Hossin, M Johnson, CM Wright, NG O'Neill, AG
Citation: M. Hossin et al., Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation, SOL ST ELEC, 44(1), 2000, pp. 85-94
Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation
Authors: Knights, AP Lourenco, MA Homewood, KP Morrison, DJ Wright, NG Ortolland, S Johnson, CM O'Neill, AG Coleman, PG Hilton, KP Uren, MJ
Citation: Ap. Knights et al., Low temperature annealing of 4H-SiC Schottky diode edge terminations formed by 30 keV Ar+ implantation, J APPL PHYS, 87(8), 2000, pp. 3973-3977
Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes
Authors: Morrison, DJ Hilton, KP Uren, MJ Wright, NG Johnson, CM O'Neill, AG
Citation: Dj. Morrison et al., Anomalous forward I-V characteristics of Ti/Au SiC Schottky barrier diodes, MAT SCI E B, 61-2, 1999, pp. 345-348
Optimisation of a power 4H-SiC SIT device for RF heating applications
Authors: Ortolland, S Johnson, CM Wright, NG Morrison, DJ O'Neill, AG
Citation: S. Ortolland et al., Optimisation of a power 4H-SiC SIT device for RF heating applications, MAT SCI E B, 61-2, 1999, pp. 411-414
Mechanistic model for oxidation of SiC
Authors: Wright, NG Johnson, CM O'Neill, AG
Citation: Ng. Wright et al., Mechanistic model for oxidation of SiC, MAT SCI E B, 61-2, 1999, pp. 468-471
Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation
Authors: Wright, NG Johnson, CM O'Neill, AG
Citation: Ng. Wright et al., Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation, SOL ST ELEC, 43(3), 1999, pp. 515-520
Risultati: 1-13 |