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Results: 1-25 | 26-36 |
Results: 26-36/36
Direct determination of electron effective mass in GaNAs/GaAs quantum wells
Authors: Hai, PN Chen, WM Buyanova, IA Xin, HP Tu, CW
Citation: Pn. Hai et al., Direct determination of electron effective mass in GaNAs/GaAs quantum wells, APPL PHYS L, 77(12), 2000, pp. 1843-1845
Self-assembled GaInNAs quantum dots for 1.3 and 1.55 mu m emission on GaAs
Authors: Sopanen, M Xin, HP Tu, CW
Citation: M. Sopanen et al., Self-assembled GaInNAs quantum dots for 1.3 and 1.55 mu m emission on GaAs, APPL PHYS L, 76(8), 2000, pp. 994-996
Nature of the fundamental band gap in GaNxP1-x alloys
Authors: Shan, W Walukiewicz, W Yu, KM Wu, J Ager, JW Haller, EE Xin, HP Tu, CW
Citation: W. Shan et al., Nature of the fundamental band gap in GaNxP1-x alloys, APPL PHYS L, 76(22), 2000, pp. 3251-3253
Effects of nitrogen on the band structure of GaNxP1-x alloys
Authors: Xin, HP Tu, CW Zhang, Y Mascarenhas, A
Citation: Hp. Xin et al., Effects of nitrogen on the band structure of GaNxP1-x alloys, APPL PHYS L, 76(10), 2000, pp. 1267-1269
Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy
Authors: Xin, HP Kavanagh, KL Zhu, ZQ Tu, CW
Citation: Hp. Xin et al., Quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells grown by gas-source molecular-beam epitaxy, J VAC SCI B, 17(4), 1999, pp. 1649-1653
Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy
Authors: Buyanova, IA Chen, WM Pozina, G Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for light emission in GaNAs/GaAs structures grown by molecular beam epitaxy, PHYS ST S-B, 216(1), 1999, pp. 125-129
Effects of rapid thermal annealing on GaInNAs GaAs multiple quantum wells
Authors: Xin, HP Kavanagh, KL Kondow, M Tu, CW
Citation: Hp. Xin et al., Effects of rapid thermal annealing on GaInNAs GaAs multiple quantum wells, J CRYST GR, 202, 1999, pp. 419-422
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy
Authors: Buyanova, IA Chen, WM Pozina, G Bergman, JP Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy, APPL PHYS L, 75(4), 1999, pp. 501-503
Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures
Authors: Buyanova, IA Chen, WM Monemar, B Xin, HP Tu, CW
Citation: Ia. Buyanova et al., Effect of growth temperature on photoluminescence of GaNAs/GaAs quantum well structures, APPL PHYS L, 75(24), 1999, pp. 3781-3783
Annealing behavior of p-type Ga0.892In0.108NxAs1-x (0 <= X <= 0.024) grownby gas-source molecular beam epitaxy
Authors: Xin, HP Tu, CW Geva, M
Citation: Hp. Xin et al., Annealing behavior of p-type Ga0.892In0.108NxAs1-x (0 <= X <= 0.024) grownby gas-source molecular beam epitaxy, APPL PHYS L, 75(10), 1999, pp. 1416-1418
Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
Authors: Xin, HP Kavanagh, KL Zhu, ZQ Tu, CW
Citation: Hp. Xin et al., Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells, APPL PHYS L, 74(16), 1999, pp. 2337-2339
Risultati: 1-25 | 26-36 |