Authors: YAMAICHI E UEDA T GAO QZ YAMAGISHI C AKIYAMA M

Citation: E. Yamaichi et al., METHOD TO OBTAIN LOW-DISLOCATION-DENSITY REGIONS BY PATTERNING WITH SIO2 ON GAAS SI FOLLOWED BY ANNEALING/, JPN J A P 2, 33(10B), 1994, pp. 120001442-120001444

Authors: YAMAICHI E UEDA T GAO QZ YAMAGISHI C AKIYAMA M

Citation: E. Yamaichi et al., METHOD TO OBTAIN LOW-DISLOCATION-DENSITY REGIONS BY PATTERNING WITH SIO2 ON GAAS SI FOLLOWED BY ANNEALING/, JPN J A P 2, 33(10B), 1994, pp. 120001442-120001444

Authors: UEDA T GAO QZ YAMAICHI E YAMAGISHI C AKIYAMA M

Citation: T. Ueda et al., GROWTH OF GAAS MICROCRYSTAL BY GA DROPLET FORMATION AND SUCCESSIVE ASSUPPLY WITH LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 145(1-4), 1994, pp. 707-713