Authors:
YAMAMICHI S
LESAICHERRE PY
YAMAGUCHI H
TAKEMURA K
SONE S
YABUTA H
SATO K
TAMURA T
NAKAJIMA K
OHNISHI S
TOKASHIKI K
HAYASHI Y
KATO Y
MIYASAKA Y
YOSHIDA M
ONO H
Citation: S. Yamamichi et al., A STACKED CAPACITOR TECHNOLOGY WITH ECR PLASMA MOCVD (BA,SR)TIO3 AND RUO2 RU/TIN/TISIX STORAGE NODES FOR GB-SCALE DRAMS/, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1076-1083
Authors:
SONE S
YABUTA H
KATO Y
IIZUKA T
YAMAMICHI S
YAMAGUCHI H
LESAICHERRE PY
NISHIMOTO S
YOSHIDA M
Citation: S. Sone et al., LOW-TEMPERATURE DEPOSITION OF (BA, SR)TIO3 FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(9B), 1996, pp. 5089-5093
Authors:
YOSHIDA M
YABUTA H
SONE S
TAKEMURA K
SAKUMA T
KATO Y
MIYASAKA Y
IIZUKA T
YAMAMICHI S
YAMAGUCHI H
LESAICHERRE PY
NISHIMOTO S
Citation: M. Yoshida et al., THIN-FILM (BA,SR)TIO3 OVER STACKED RUO2 NODES FOR GBIT DRAM CAPACITORS, NEC research & development, 37(3), 1996, pp. 305-316
Authors:
YAMAMICHI S
MURAMATSU Y
LESAICHERRE PY
ONO H
Citation: S. Yamamichi et al., INFLUENCE OF STRONTIUM IMPURITIES ON SILICON SUBSTRATES DURING THERMAL-PROCESSING, JPN J A P 1, 34(9B), 1995, pp. 5188-5192
Authors:
TAKEMURA K
YAMAMICHI S
LESAICHERRE PY
TOKASHIKI K
MIYAMOTO H
ONO H
MIYASAKA Y
YOSHIDA H
Citation: K. Takemura et al., RUO2 TIN-BASED STORAGE ELECTRODES FOR (BA,SR)TIO3 DYNAMIC RANDOM-ACCESS MEMORY CAPACITORS/, JPN J A P 1, 34(9B), 1995, pp. 5224-5229
Authors:
LESAICHERRE PY
YAMAMICHI S
TAKEMURA K
YAMAGUCHI H
TOKASHIKI K
MIYASAKA Y
YOSHIDA M
ONO H
Citation: Py. Lesaicherre et al., A GBIT-SCALE DRAM STACKED CAPACITOR WITH ECR MOCVD SRTIO3 OVER RIE PATTERNED RUO2 TIN STORAGE NODES/, Integrated ferroelectrics, 11(1-4), 1995, pp. 81-100
Citation: S. Yamamichi et al., (BA+SR) TI RATIO DEPENDENCE OF THE DIELECTRIC-PROPERTIES FOR (BA.05SR0.5)TIO3 THIN-FILMS PREPARED BY ION-BEAM SPUTTERING/, Applied physics letters, 64(13), 1994, pp. 1644-1646