ACNP - Italian Periodicals Catalogue

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Results: 1-7 |

Results: 7

A STACKED CAPACITOR TECHNOLOGY WITH ECR PLASMA MOCVD (BA,SR)TIO3 AND RUO2 RU/TIN/TISIX STORAGE NODES FOR GB-SCALE DRAMS/

Authors: YAMAMICHI S LESAICHERRE PY YAMAGUCHI H TAKEMURA K SONE S YABUTA H SATO K TAMURA T NAKAJIMA K OHNISHI S TOKASHIKI K HAYASHI Y KATO Y MIYASAKA Y YOSHIDA M ONO H

Citation: S. Yamamichi et al., A STACKED CAPACITOR TECHNOLOGY WITH ECR PLASMA MOCVD (BA,SR)TIO3 AND RUO2 RU/TIN/TISIX STORAGE NODES FOR GB-SCALE DRAMS/, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1076-1083

LOW-TEMPERATURE DEPOSITION OF (BA, SR)TIO3 FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION

Authors: SONE S YABUTA H KATO Y IIZUKA T YAMAMICHI S YAMAGUCHI H LESAICHERRE PY NISHIMOTO S YOSHIDA M

Citation: S. Sone et al., LOW-TEMPERATURE DEPOSITION OF (BA, SR)TIO3 FILMS BY ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(9B), 1996, pp. 5089-5093

THIN-FILM (BA,SR)TIO3 OVER STACKED RUO2 NODES FOR GBIT DRAM CAPACITORS

Authors: YOSHIDA M YABUTA H SONE S TAKEMURA K SAKUMA T KATO Y MIYASAKA Y IIZUKA T YAMAMICHI S YAMAGUCHI H LESAICHERRE PY NISHIMOTO S

Citation: M. Yoshida et al., THIN-FILM (BA,SR)TIO3 OVER STACKED RUO2 NODES FOR GBIT DRAM CAPACITORS, NEC research & development, 37(3), 1996, pp. 305-316

INFLUENCE OF STRONTIUM IMPURITIES ON SILICON SUBSTRATES DURING THERMAL-PROCESSING

Authors: YAMAMICHI S MURAMATSU Y LESAICHERRE PY ONO H

Citation: S. Yamamichi et al., INFLUENCE OF STRONTIUM IMPURITIES ON SILICON SUBSTRATES DURING THERMAL-PROCESSING, JPN J A P 1, 34(9B), 1995, pp. 5188-5192

RUO2 TIN-BASED STORAGE ELECTRODES FOR (BA,SR)TIO3 DYNAMIC RANDOM-ACCESS MEMORY CAPACITORS/

Authors: TAKEMURA K YAMAMICHI S LESAICHERRE PY TOKASHIKI K MIYAMOTO H ONO H MIYASAKA Y YOSHIDA H

Citation: K. Takemura et al., RUO2 TIN-BASED STORAGE ELECTRODES FOR (BA,SR)TIO3 DYNAMIC RANDOM-ACCESS MEMORY CAPACITORS/, JPN J A P 1, 34(9B), 1995, pp. 5224-5229

A GBIT-SCALE DRAM STACKED CAPACITOR WITH ECR MOCVD SRTIO3 OVER RIE PATTERNED RUO2 TIN STORAGE NODES/

Authors: LESAICHERRE PY YAMAMICHI S TAKEMURA K YAMAGUCHI H TOKASHIKI K MIYASAKA Y YOSHIDA M ONO H

Citation: Py. Lesaicherre et al., A GBIT-SCALE DRAM STACKED CAPACITOR WITH ECR MOCVD SRTIO3 OVER RIE PATTERNED RUO2 TIN STORAGE NODES/, Integrated ferroelectrics, 11(1-4), 1995, pp. 81-100

(BA+SR) TI RATIO DEPENDENCE OF THE DIELECTRIC-PROPERTIES FOR (BA.05SR0.5)TIO3 THIN-FILMS PREPARED BY ION-BEAM SPUTTERING/

Authors: YAMAMICHI S YABUTA H SAKUMA T MIYASAKA Y

Citation: S. Yamamichi et al., (BA+SR) TI RATIO DEPENDENCE OF THE DIELECTRIC-PROPERTIES FOR (BA.05SR0.5)TIO3 THIN-FILMS PREPARED BY ION-BEAM SPUTTERING/, Applied physics letters, 64(13), 1994, pp. 1644-1646

Risultati: 1-7 |