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Results: 1-16 |
Results: 16
A SEMIANALYTICAL PARAMETER-EXTRACTION PROCEDURE FOR HBT EQUIVALENT-CIRCUIT
Authors: LI B PRASAD S YANG LW WANG SC
Citation: B. Li et al., A SEMIANALYTICAL PARAMETER-EXTRACTION PROCEDURE FOR HBT EQUIVALENT-CIRCUIT, IEEE transactions on microwave theory and techniques, 46(10), 1998, pp. 1427-1435
SELECTIVITY AMONG, AND AGGREGATION OF, LANTHANIDE IONS
Authors: CARAVAN P LOWE MP READ PW RETTIG SJ YANG LW ORVIG C
Citation: P. Caravan et al., SELECTIVITY AMONG, AND AGGREGATION OF, LANTHANIDE IONS, Journal of alloys and compounds, 249(1-2), 1997, pp. 49-51
INLET STEAM QUALITY OF A TOP BREAK HOLE ON HORIZONTAL PIPE
Authors: XU JL CHEN TK ZHAI XY YANG LW SONG JY
Citation: Jl. Xu et al., INLET STEAM QUALITY OF A TOP BREAK HOLE ON HORIZONTAL PIPE, Progress in Natural Science, 6(4), 1996, pp. 472-478
MEASUREMENT AND COMPARISON OF 1 F NOISE AND G-R NOISE IN SILICON HOMOJUNCTION AND III-V HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: KIRTANIA AK DAS MB CHANDRASEKHAR S LUNARDI LM QUA GJ HAMM RA YANG LW
Citation: Ak. Kirtania et al., MEASUREMENT AND COMPARISON OF 1 F NOISE AND G-R NOISE IN SILICON HOMOJUNCTION AND III-V HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 43(5), 1996, pp. 784-792
A COMPREHENSIVE OPTICAL CHARACTERIZATION METHOD FOR HIGH-PERFORMANCE N-P-N ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: LU ZH MAJERFELD A WRIGHT PD YANG LW
Citation: Zh. Lu et al., A COMPREHENSIVE OPTICAL CHARACTERIZATION METHOD FOR HIGH-PERFORMANCE N-P-N ALGAAS-GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE journal of selected topics in quantum electronics, 1(4), 1995, pp. 1030-1036
NOVEL FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: REN F ABERNATHY CR PEARTON SJ YANG LW FU ST
Citation: F. Ren et al., NOVEL FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 38(9), 1995, pp. 1635-1639
COMPLEXES OF TRIVALENT METAL-IONS WITH POTENTIALLY HEPTADENTATE N4O3 SCHIFF-BASE AND AMINE PHENOL LIGANDS OF VARYING RIGIDITY
Authors: YANG LW LIU S WONG E RETTIG SJ ORVIG C
Citation: Lw. Yang et al., COMPLEXES OF TRIVALENT METAL-IONS WITH POTENTIALLY HEPTADENTATE N4O3 SCHIFF-BASE AND AMINE PHENOL LIGANDS OF VARYING RIGIDITY, Inorganic chemistry, 34(8), 1995, pp. 2164-2178
COMPLEXATION OF THE POTENTIALLY HEPTADENTATE LIGAND H(3)DHA(3)TREN WITH LANTHANIDES - ARCHITECTURE OF A [ND(NO3)(3)(H(3)DHA(3)TREN)](N) POLYMER WITH PROFUSE MODES OF NITRATE COORDINATION
Authors: YANG LW LIU S RETTIG SJ ORVIG C
Citation: Lw. Yang et al., COMPLEXATION OF THE POTENTIALLY HEPTADENTATE LIGAND H(3)DHA(3)TREN WITH LANTHANIDES - ARCHITECTURE OF A [ND(NO3)(3)(H(3)DHA(3)TREN)](N) POLYMER WITH PROFUSE MODES OF NITRATE COORDINATION, Inorganic chemistry, 34(19), 1995, pp. 4921-4925
PDGETIPT OHMIC CONTACTS TO P(+)-ALXGA1-XAS
Authors: HAN WY COLE MW CASAS LM JONES KA LEE HS WADE M DEANNI A LAPORE A LU Y YANG LW
Citation: Wy. Han et al., PDGETIPT OHMIC CONTACTS TO P(+)-ALXGA1-XAS, Applied physics letters, 67(2), 1995, pp. 273-275
FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: REN F LOTHIAN JR PEARTON SJ ABERNATHY CR WISK PW FULLOWAN TR TSENG B CHU SNG CHEN YK YANG LW FU ST BROZOVICH RS LIN HH HENNING CL HENRY T
Citation: F. Ren et al., FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2916-2928
EFFECTS OF HEAVILY CARBON-DOPED BASE LAYERS ON PERFORMANCE OF SUBMICRON ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: YANG LW WRIGHT PD SHEN H LU Y BRUSENBACK PR KO SK CALDERON L HARTZLER WD HAN WY DUTTA M CHANG WH
Citation: Lw. Yang et al., EFFECTS OF HEAVILY CARBON-DOPED BASE LAYERS ON PERFORMANCE OF SUBMICRON ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS, JPN J A P 2, 32(10A), 1993, pp. 120001400-120001402
SELF-ALIGNED INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION/
Authors: REN F ABERNATHY CR PEARTON SJ LOTHIAN JR WISK PW FULLOWAN TR CHEN YK YANG LW FU ST BROZOVICH RS LIN HH
Citation: F. Ren et al., SELF-ALIGNED INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION/, IEEE electron device letters, 14(7), 1993, pp. 332-334
SHALLOW OHMIC CONTACT TO BOTH N-GAAS AND P-GAAS
Authors: HAN WY LU Y LEE HS COLE MW CASAS LM DEANNI A JONES KA YANG LW
Citation: Wy. Han et al., SHALLOW OHMIC CONTACT TO BOTH N-GAAS AND P-GAAS, Journal of applied physics, 74(1), 1993, pp. 754-756
BULKY ORTHO 3-METHOXY GROUPS ON N4O3 AMINE PHENOL LIGANDS PRODUCING 6-COORDINATE BIS(LIGAND)LANTHANIDE COMPLEX CATIONS 3L)2]3-HYDROXY-3-METHOXYBENZYL)AMINO)ETHYL)AMINE)( (LN = PR, GD H3L = TRIS(((2)
Authors: LIU S YANG LW RETTIG SJ ORVIG C
Citation: S. Liu et al., BULKY ORTHO 3-METHOXY GROUPS ON N4O3 AMINE PHENOL LIGANDS PRODUCING 6-COORDINATE BIS(LIGAND)LANTHANIDE COMPLEX CATIONS 3L)2]3-HYDROXY-3-METHOXYBENZYL)AMINO)ETHYL)AMINE)( (LN = PR, GD H3L = TRIS(((2), Inorganic chemistry, 32(12), 1993, pp. 2773-2778
DRY-ETCHING OF VIA CONNECTIONS FOR INP POWER DEVICES
Authors: CONSTANTINE C BARRATT C PEARTON SJ REN F LOTHIAN JR HOBSON WS KATZ A YANG LW CHAO PC
Citation: C. Constantine et al., DRY-ETCHING OF VIA CONNECTIONS FOR INP POWER DEVICES, Electronics Letters, 29(11), 1993, pp. 984-986
EFFECTS OF ANNEALING CONDITIONS ON HEAVILY CARBON-DOPED INGAAS
Authors: HAN WY CALDERON L LU Y SCHAUER SN MOERKIRK RP LEE HS FLEMISH JR JONES KA YANG LW
Citation: Wy. Han et al., EFFECTS OF ANNEALING CONDITIONS ON HEAVILY CARBON-DOPED INGAAS, Applied physics letters, 62(20), 1993, pp. 2578-2580
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