Authors: MEINERTZHAGEN A PETIT C YARD G JOURDAIN M MONDON F

Citation: A. Meinertzhagen et al., EFFECT OF THE DISCHARGING AND RECHARGING OF THE STRESS GENERATED OXIDE CHARGE IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS ON THE LOW-FIELD LEAKAGE CURRENT, Microelectronics and reliability, 38(2), 1998, pp. 221-225

Authors: YARD G MEINERTZHAGEN A PETIT C JOURDAIN M MONDON F

Citation: G. Yard et al., COMPARISON OF THE CHARGES GENERATED BY FOWLER-NORDHEIM TUNNELING INJECTION IN DIFFERENT OXIDES OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of non-crystalline solids, 216, 1997, pp. 174-179

Authors: MEINERTZHAGEN A PETIT C YARD G JOURDAIN M ELHDIY A

Citation: A. Meinertzhagen et al., ON THE POSITIVE CHARGE AND INTERFACE STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 80(1), 1996, pp. 271-277

Authors: MEINERTZHAGEN A PETIT C YARD G JAURDAIN M SALACE G

Citation: A. Meinertzhagen et al., ON THE DECAY OF THE TRAPPED HOLES AND THE SLOW STATES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS, Journal of applied physics, 79(5), 1996, pp. 2549-2558

Authors: MEINERTZHAGEN A YARD G PETIT C JOURDAIN M ELHDIY A SALACE G REIMBOLD G

Citation: A. Meinertzhagen et al., COMPARISON OF THE GENERATED OXIDE CHARGE BY INJECTION OF ELECTRONS FOR BOTH POLARITIES, Journal of non-crystalline solids, 187, 1995, pp. 181-185