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Results: 1-19 |
Results: 19
CORRELATION BETWEEN STRUCTURE AND OPTOELECTRONIC PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON
Authors: SIEBKE F YATA S HISHIKAWA Y TANAKA M
Citation: F. Siebke et al., CORRELATION BETWEEN STRUCTURE AND OPTOELECTRONIC PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON, JPN J A P 1, 37(4A), 1998, pp. 1730-1735
CORRELATION BETWEEN STRUCTURE AND OPTOELECTRONIC PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON
Authors: SIEBKE F YATA S HISHIKAWA Y TANAKA M
Citation: F. Siebke et al., CORRELATION BETWEEN STRUCTURE AND OPTOELECTRONIC PROPERTIES OF UNDOPED MICROCRYSTALLINE SILICON, Journal of non-crystalline solids, 230, 1998, pp. 977-981
OPTICAL CONFINEMENT IN HIGH-EFFICIENCY A-SI SOLAR-CELLS WITH TEXTUREDSURFACES
Authors: HISHIKAWA Y MARUYAMA E YATA S TANAKA M KIYAMA S TSUDA S
Citation: Y. Hishikawa et al., OPTICAL CONFINEMENT IN HIGH-EFFICIENCY A-SI SOLAR-CELLS WITH TEXTUREDSURFACES, Solar energy materials and solar cells, 49(1-4), 1997, pp. 143-148
ESR STUDY OF LI-DOPED POLYACENIC SEMICONDUCTOR (PAS) MATERIALS
Authors: TANAKA K AGO H MATSUURA Y KUGA T YAMABE T YATA S HATO Y ANDO N
Citation: K. Tanaka et al., ESR STUDY OF LI-DOPED POLYACENIC SEMICONDUCTOR (PAS) MATERIALS, Synthetic metals, 89(2), 1997, pp. 133-139
LI-7 NMR-STUDY OF LI-DOPED POLYACENIC SEMICONDUCTOR (PAS) MATERIALS
Authors: AGO H TANAKA K YAMABE T TAKEGOSHI K TERAO T YATA S HATO Y ANDO N
Citation: H. Ago et al., LI-7 NMR-STUDY OF LI-DOPED POLYACENIC SEMICONDUCTOR (PAS) MATERIALS, Synthetic metals, 89(2), 1997, pp. 141-147
STRUCTURE AND PROPERTIES OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR (PAS)
Authors: YAMABE T TANAKA K AGO H YOSHIZAWA K YATA S
Citation: T. Yamabe et al., STRUCTURE AND PROPERTIES OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR (PAS), Synthetic metals, 86(1-3), 1997, pp. 2411-2414
PROMISING ANODE ACTIVE MATERIALS FOR THE COMING LITHIUM SECONDARY BATTERIES .1. POLYACENE ELECTRODE
Authors: YATA S
Citation: S. Yata, PROMISING ANODE ACTIVE MATERIALS FOR THE COMING LITHIUM SECONDARY BATTERIES .1. POLYACENE ELECTRODE, Denki Kagaku Oyobi Kogyo Butsuri Kagaku, 65(9), 1997, pp. 706-711
ESR STUDY OF ALKALI-DOPED POLYACENIC SEMICONDUCTOR (PAS) MATERIALS PREPARED BY THERMAL-DECOMPOSITION OF AZIDES
Authors: AGO H KUGA T YAMABE T TANAKA K YATA S ANDO N
Citation: H. Ago et al., ESR STUDY OF ALKALI-DOPED POLYACENIC SEMICONDUCTOR (PAS) MATERIALS PREPARED BY THERMAL-DECOMPOSITION OF AZIDES, Carbon, 35(5), 1997, pp. 651-656
STRUCTURAL-ANALYSIS OF POLYACENIC SEMICONDUCTOR (PAS) MATERIALS WITH (129)XENON NMR MEASUREMENTS
Authors: AGO H TANAKA K YAMABE T MIYOSHI T TAKEGOSHI K TERAO T YATA S HATO Y NAGURA S ANDO N
Citation: H. Ago et al., STRUCTURAL-ANALYSIS OF POLYACENIC SEMICONDUCTOR (PAS) MATERIALS WITH (129)XENON NMR MEASUREMENTS, Carbon, 35(12), 1997, pp. 1781-1787
PREPARATION OF POLYACENIC SEMICONDUCTIVE THIN-FILMS BY EXCIMER-LASER ABLATION
Authors: NISHIO S KATO S MATSUZAKI A SATO H KINOSHITA H YATA S TANAKA K YAMABE T
Citation: S. Nishio et al., PREPARATION OF POLYACENIC SEMICONDUCTIVE THIN-FILMS BY EXCIMER-LASER ABLATION, Synthetic metals, 83(1), 1996, pp. 67-71
POLYACENE CAPACITORS
Authors: YATA S OKAMOTO E SATAKE H KUBOTA H FUJII M TAGUCHI T KINOSHITA H
Citation: S. Yata et al., POLYACENE CAPACITORS, Journal of power sources, 60(2), 1996, pp. 207-212
CHARACTERISTICS OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR MATERIAL AND FABRICATION OF A LI SECONDARY BATTERY
Authors: YATA S HATO Y KINOSHITA H ANDO N ANEKAWA A HASHIMOTO T YAMAGUCHI M TANAKA K YAMABE T
Citation: S. Yata et al., CHARACTERISTICS OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR MATERIAL AND FABRICATION OF A LI SECONDARY BATTERY, Synthetic metals, 73(3), 1995, pp. 273-277
RECENT DEVELOPMENT OF STUDY ON POLYACENIC SEMICONDUCTOR (PAS) MATERIALS
Authors: TANAKA K YATA S YAMABE T
Citation: K. Tanaka et al., RECENT DEVELOPMENT OF STUDY ON POLYACENIC SEMICONDUCTOR (PAS) MATERIALS, Synthetic metals, 71(1-3), 1995, pp. 2147-2149
HISTOLOGICAL-CHANGES OF SOFTWOOD SURFACES DURING OUTDOOR WEATHERING
Authors: YATA S TAMURA T
Citation: S. Yata et T. Tamura, HISTOLOGICAL-CHANGES OF SOFTWOOD SURFACES DURING OUTDOOR WEATHERING, Mokuzai Gakkaishi, 41(11), 1995, pp. 1035-1042
STRUCTURE AND PROPERTIES OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR-MATERIALS BEYOND C6LI STAGE
Authors: YATA S KINOSHITA H KOMORI M ANDO N KASHIWAMURA T HARADA T TANAKA K YAMABE T
Citation: S. Yata et al., STRUCTURE AND PROPERTIES OF DEEPLY LI-DOPED POLYACENIC SEMICONDUCTOR-MATERIALS BEYOND C6LI STAGE, Synthetic metals, 62(2), 1994, pp. 153-158
UNIFORM AND LARGE-AREA DEPOSITION OF DIAMOND BY CYCLIC THERMAL PLASMACHEMICAL-VAPOR-DEPOSITION
Authors: EGUCHI K YATA S YOSHIDA T
Citation: K. Eguchi et al., UNIFORM AND LARGE-AREA DEPOSITION OF DIAMOND BY CYCLIC THERMAL PLASMACHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 64(1), 1994, pp. 58-60
ELECTROCHEMICAL AC-IMPEDANCE MEASUREMENT OF THE ELECTRODE FABRICATED BY POLYACENIC SEMICONDUCTIVE MATERIAL
Authors: TANAKA K NISHIO S YAMANAKA S YAMABE T YATA S
Citation: K. Tanaka et al., ELECTROCHEMICAL AC-IMPEDANCE MEASUREMENT OF THE ELECTRODE FABRICATED BY POLYACENIC SEMICONDUCTIVE MATERIAL, Synthetic metals, 60(1), 1993, pp. 39-43
CHEMICAL DOPING OF POLYACENIC SEMICONDUCTIVE MATERIAL WITH VARIOUS LEWIS-ACIDS OF BULKY SIZE
Authors: TANAKA K TAKEDA S KOIKE T NISHIO S YAMABE T YATA S
Citation: K. Tanaka et al., CHEMICAL DOPING OF POLYACENIC SEMICONDUCTIVE MATERIAL WITH VARIOUS LEWIS-ACIDS OF BULKY SIZE, Synthetic metals, 58(1), 1993, pp. 123-130
STRUCTURE AND PROPERTIES OF DEEPLY N-DOPED POLYACENIC SEMICONDUCTOR (PAS)
Authors: YATA S KINOSHITA H KOMORI M ANDO N KASHIWAMURA T HARADA T TANAKA K YAMABE T
Citation: S. Yata et al., STRUCTURE AND PROPERTIES OF DEEPLY N-DOPED POLYACENIC SEMICONDUCTOR (PAS), Synthetic metals, 55(1), 1993, pp. 388-393
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