Authors:
RAMIREZ R
HERRERO CP
ARTACHO E
YNDURAIN F
Citation: R. Ramirez et al., LOW-ENERGY QUANTUM DYNAMICS OF ATOMS AT DEFECTS - INTERSTITIAL OXYGENIN SILICON, Journal of physics. Condensed matter, 9(15), 1997, pp. 3107-3116
Authors:
HINAREJOS JJ
CASTRO GR
SEGOVIA P
ALVAREZ J
MICHEL EG
MIRANDA R
RODRIGUEZMARCO A
SANCHEZPORTAL D
ARTACHO E
YNDURAIN F
YANG SH
ORDEJON P
ADAMS JB
Citation: Jj. Hinarejos et al., SURFACE ELECTRONIC-STRUCTURE OF METASTABLE FESI(CSCL)(111) EPITAXIALLY GROWN ON SI(111), Physical review. B, Condensed matter, 55(24), 1997, pp. 16065-16068
Citation: F. Yndurain, MODEL FOR THE VARIATION UPON DOPING OF THE ISOTOPE COEFFICIENT IN HIGH-T-C SUPERCONDUCTORS, Physical review. B, Condensed matter, 51(13), 1995, pp. 8494-8497
Citation: E. Artacho et al., GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON, Physical review. B, Condensed matter, 51(12), 1995, pp. 7862-7865
Citation: A. Lizonnordstrom et F. Yndurain, REAL-SPACE FIRST PRINCIPLES CALCULATION OF THE QUASI-PARTICLE SPECTRUM IN SEMICONDUCTORS - APPLICATION TO INTERSTITIAL O IN SI, Solid state communications, 94(5), 1995, pp. 335-340
Citation: F. Yndurain et P. Ordejon, ELECTRONIC-STRUCTURE OF AMORPHOUS SEMICONDUCTING ALLOYS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(3), 1994, pp. 535-546
Citation: A. Lizonnordstrom et F. Yndurain, GEOMETRICAL CONFIGURATION OF INTERSTITIAL OXYGEN IN SILICON AND IN GERMANIUM, Solid state communications, 89(9), 1994, pp. 819-822