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Results: 1-9 |
Results: 9
A REVOLUTION IN SPAIN ENERGY RESEARCH-CENTER
Authors: YNDURAIN F
Citation: F. Yndurain, A REVOLUTION IN SPAIN ENERGY RESEARCH-CENTER, Nature, 1998, pp. 7-7
LOW-ENERGY QUANTUM DYNAMICS OF ATOMS AT DEFECTS - INTERSTITIAL OXYGENIN SILICON
Authors: RAMIREZ R HERRERO CP ARTACHO E YNDURAIN F
Citation: R. Ramirez et al., LOW-ENERGY QUANTUM DYNAMICS OF ATOMS AT DEFECTS - INTERSTITIAL OXYGENIN SILICON, Journal of physics. Condensed matter, 9(15), 1997, pp. 3107-3116
INTERSTITIAL OXYGEN IN GERMANIUM AND SILICON
Authors: ARTACHO E YNDURAIN F PAJOT B RAMIREZ R HERRERO CP KHIRUNENKO LI ITOH KM HALLER EE
Citation: E. Artacho et al., INTERSTITIAL OXYGEN IN GERMANIUM AND SILICON, Physical review. B, Condensed matter, 56(7), 1997, pp. 3820-3833
SURFACE ELECTRONIC-STRUCTURE OF METASTABLE FESI(CSCL)(111) EPITAXIALLY GROWN ON SI(111)
Authors: HINAREJOS JJ CASTRO GR SEGOVIA P ALVAREZ J MICHEL EG MIRANDA R RODRIGUEZMARCO A SANCHEZPORTAL D ARTACHO E YNDURAIN F YANG SH ORDEJON P ADAMS JB
Citation: Jj. Hinarejos et al., SURFACE ELECTRONIC-STRUCTURE OF METASTABLE FESI(CSCL)(111) EPITAXIALLY GROWN ON SI(111), Physical review. B, Condensed matter, 55(24), 1997, pp. 16065-16068
MODEL FOR THE VARIATION UPON DOPING OF THE ISOTOPE COEFFICIENT IN HIGH-T-C SUPERCONDUCTORS
Authors: YNDURAIN F
Citation: F. Yndurain, MODEL FOR THE VARIATION UPON DOPING OF THE ISOTOPE COEFFICIENT IN HIGH-T-C SUPERCONDUCTORS, Physical review. B, Condensed matter, 51(13), 1995, pp. 8494-8497
GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON
Authors: ARTACHO E LIZONNORDSTROM A YNDURAIN F
Citation: E. Artacho et al., GEOMETRY AND QUANTUM DELOCALIZATION OF INTERSTITIAL OXYGEN IN SILICON, Physical review. B, Condensed matter, 51(12), 1995, pp. 7862-7865
REAL-SPACE FIRST PRINCIPLES CALCULATION OF THE QUASI-PARTICLE SPECTRUM IN SEMICONDUCTORS - APPLICATION TO INTERSTITIAL O IN SI
Authors: LIZONNORDSTROM A YNDURAIN F
Citation: A. Lizonnordstrom et F. Yndurain, REAL-SPACE FIRST PRINCIPLES CALCULATION OF THE QUASI-PARTICLE SPECTRUM IN SEMICONDUCTORS - APPLICATION TO INTERSTITIAL O IN SI, Solid state communications, 94(5), 1995, pp. 335-340
ELECTRONIC-STRUCTURE OF AMORPHOUS SEMICONDUCTING ALLOYS
Authors: YNDURAIN F ORDEJON P
Citation: F. Yndurain et P. Ordejon, ELECTRONIC-STRUCTURE OF AMORPHOUS SEMICONDUCTING ALLOYS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(3), 1994, pp. 535-546
GEOMETRICAL CONFIGURATION OF INTERSTITIAL OXYGEN IN SILICON AND IN GERMANIUM
Authors: LIZONNORDSTROM A YNDURAIN F
Citation: A. Lizonnordstrom et F. Yndurain, GEOMETRICAL CONFIGURATION OF INTERSTITIAL OXYGEN IN SILICON AND IN GERMANIUM, Solid state communications, 89(9), 1994, pp. 819-822
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