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Results: 26-37/37
Authors:
KAWAI T
YONEZU H
SAITO D
YOKOZEKI M
PAK K
Citation: T. Kawai et al., OBSERVATION OF THREADING DISLOCATION GENERATION PROCESS IN HIGHLY LATTICE-MISMATCHED HETEROEPITAXY, JPN J A P 2, 33(12B), 1994, pp. 1740-1743
Authors:
PAK K
SAITOH I
OHSHIMA N
YONEZU H
Citation: K. Pak et al., IN-SITU MASKLESS SELECTIVE-AREA EPITAXY OF GAAS USING A LOW-ENERGY GAFOCUSED ION-BEAM, Journal of crystal growth, 140(1-2), 1994, pp. 244-247
Authors:
MARUYAMA H
PAK K
YONEZU H
Citation: H. Maruyama et al., INITIAL GROWTH MODES OF INP LAYER GROWN BY MOLECULAR-BEAM EPITAXY ANDMIGRATION-ENHANCED EPITAXY ON SI FILMS GROWN ON INP(100) SUBSTRATES, Journal of crystal growth, 139(1-2), 1994, pp. 19-26
Authors:
MELENDEZLIRA M
JIMENEZSANDOVAL S
LOPEZLOPEZ M
HERNANDEZCALDERON I
KAWAI T
PAK K
YONEZU H
Citation: M. Melendezlira et al., A STUDY OF FRANZ-KELDYSH OSCILLATIONS OF GAAS SI/GAAS AND ALAS/SI/ALAS HETEROSTRUCTURES/, Journal of applied physics, 76(6), 1994, pp. 3616-3619
Authors:
MELENDEZLIRA M
JIMENEZSANDOVAL S
LOPEZLOPEZ M
HERNANDEZCALDERON I
YAMAUCHI Y
KAWAI T
PAK K
YONEZU H
Citation: M. Melendezlira et al., DIFFERENTIAL PHOTOREFLECTANCE AND RAMAN STUDIES OF MBE-GROWN GAAS SI/GAAS STRUCTURES/, Journal of physics. Condensed matter, 5, 1993, pp. 357-358
Authors:
MARUYAMA H
PAK K
SAKAKIBARA K
YONEZU H
TAKANO Y
Citation: H. Maruyama et al., STUDY ON INITIAL GROWTH-PROCESS OF SI ON INP(100) SUBSTRATE GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 131(3-4), 1993, pp. 316-322
Authors:
KAWAI T
YONEZU H
YAMAUCHI Y
LOPEZ M
PAK K
KURNER W
Citation: T. Kawai et al., INITIAL GROWTH-PROCESS OF GAAS ON GE SUBSTRATE AND PSEUDOMORPHIC SI INTERLAYER, Journal of crystal growth, 127(1-4), 1993, pp. 107-111
Authors:
KAWAI T
YONEZU H
OGASAWARA Y
SAITO D
PAK K
Citation: T. Kawai et al., SEGREGATION AND INTERDIFFUSION OF IN ATOMS IN GAAS INAS/GAAS HETEROSTRUCTURES/, Journal of applied physics, 74(3), 1993, pp. 1770-1775
Authors:
KAWAI T
YONEZU H
OGASAWARA Y
SAITO D
PAK K
Citation: T. Kawai et al., GROWTH-MECHANISM OF (INAS)M(GAAS)N STRAINED SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 74(12), 1993, pp. 7257-7263
Authors:
TSUJI K
YONEZU H
SHIBAO K
HOSONO K
PAK K
Citation: K. Tsuji et al., ADAPTIVE DEVICE FOR SYNAPTIC CONNECTION WITH OPTICAL INTERCONNECTIONS, Electronics Letters, 29(20), 1993, pp. 1774-1775
Authors:
MARUYAMA H
PAK K
SAKAKIBARA K
YONEZU H
Citation: H. Maruyama et al., REALIZATION OF NEARLY 2-DIMENSIONAL GROWTH MODE FOR ALP ON SI(100) SUBSTRATE BY A LOW-TEMPERATURE MIGRATION-ENHANCED EPITAXY, Applied physics letters, 63(17), 1993, pp. 2375-2377
Authors:
KAWAI T
YONEZU H
OGASAWARA Y
SAITO D
PAK K
Citation: T. Kawai et al., SUPPRESSION OF THREADING DISLOCATION GENERATION IN HIGHLY LATTICE-MISMATCHED HETEROEPITAXIES BY STRAINED SHORT-PERIOD SUPERLATTICES, Applied physics letters, 63(15), 1993, pp. 2067-2069