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Citation: St. Kim et al., PREPARATION AND PROPERTIES OF FREESTANDING HVPE GROWN GAN SUBSTRATES, Journal of crystal growth, 194(1), 1998, pp. 37-42

Authors: CHOI WJ CHANG JH CHOI WT KIM SH KIM JS LEEM SJ YOO TK

Citation: Wj. Choi et al., HYDROGEN EFFECT ON 670-NM ALGAINP VISIBLE LASER DURING HIGH-TEMPERATURE OPERATION, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 717-722

Authors: KIM JS YANG M CHOI WJ CHANG JH CHO IS CHOI WT YOO TK

Citation: Js. Kim et al., 670-NM ALGAINP GAINP STRAINED MULTIQUANTUM-WELL LASER-DIODE WITH HIGHCHARACTERISTIC TEMPERATURE (T(0)), Optical and quantum electronics, 27(5), 1995, pp. 435-440

Authors: CHOI WJ KIM JS KO HC CHUNG KW YOO TK

Citation: Wj. Choi et al., COMPOSITIONAL DEPENDENCE OF THE ORDERING PROBABILITY IN GAYIN(1-Y)P GAAS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 77(7), 1995, pp. 3111-3114

Authors: AHN D YOO TK

Citation: D. Ahn et Tk. Yoo, ENVELOPE FUNCTION CALCULATIONS OF LINEAR AND NONLINEAR-OPTICAL GAINS IN A STRAINED-LAYER QUANTUM-WELL LASER, IEEE journal of quantum electronics, 29(12), 1993, pp. 2864-2872

Authors: YOO TK SPENCER R SCHAFF WJ EASTMAN LF CHUNG KW AHN D

Citation: Tk. Yoo et al., GRADED INGAAS GAAS STRAINED-LAYER SINGLE-QUANTUM-WELL LASER/, Applied physics letters, 62(18), 1993, pp. 2239-2241