Authors:
WANG ZM
ZHANG YX
WU K
YUAN MH
CHEN WX
QIN GG
Citation: Zm. Wang et al., EFFECTS OF HYDROGEN ON ER P-TYPE SI SCHOTTKY-BARRIER DIODES/, Physical review. B, Condensed matter, 51(12), 1995, pp. 7878-7881
Authors:
JIN SX
YUAN MH
WANG LP
SONG HZ
WANG HP
QIN GG
Citation: Sx. Jin et al., CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 37(6), 1994, pp. 730-737
Citation: Mh. Yuan et al., EFFECT OF BIAS ANNEALING ON AU N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION/, Journal of applied physics, 76(9), 1994, pp. 5592-5594
Authors:
YUAN MH
SONG HZ
JIN SX
WANG HP
QIAO YP
QIN GG
Citation: Mh. Yuan et al., EFFECT OF REVERSE-BIAS ANNEALING AND ZERO-BIAS ANNEALING ON A HYDROGEN-CONTAINING AU (N-TYPE GAAS) SCHOTTKY-BARRIER/, Physical review. B, Condensed matter, 48(24), 1993, pp. 17986-17994
Authors:
JIN SX
WANG HP
YUAN MH
SONG HZ
WANG H
MAO WL
QIN GG
REN ZY
LI BC
HU XW
SUN GS
Citation: Sx. Jin et al., CONTROLLING OF SCHOTTKY-BARRIER HEIGHTS FOR AU N-GAAS AND TI/N-GAAS WITH HYDROGEN INTRODUCED AFTER METAL-DEPOSITION BY BIAS ANNEALING/, Applied physics letters, 62(21), 1993, pp. 2719-2721