Authors: WANG ZM ZHANG YX WU K YUAN MH CHEN WX QIN GG

Citation: Zm. Wang et al., EFFECTS OF HYDROGEN ON ER P-TYPE SI SCHOTTKY-BARRIER DIODES/, Physical review. B, Condensed matter, 51(12), 1995, pp. 7878-7881

Authors: CHEN WX YUAN MH WU K ZHANG YX WANG ZM QIN GG

Citation: Wx. Chen et al., EXPERIMENTAL-STUDY ON THE ER P-INP SCHOTTKY-BARRIER/, Journal of applied physics, 78(1), 1995, pp. 584-586

Authors: JIN SX YUAN MH WANG LP SONG HZ WANG HP QIN GG

Citation: Sx. Jin et al., CONTROLLING THE SCHOTTKY-BARRIER HEIGHT OF TI N-GAAS SCHOTTKY DIODE CONTAINING HYDROGEN BY BIASED ANNEALING/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 37(6), 1994, pp. 730-737

Authors: YUAN MH JIA YQ QIN GG

Citation: Mh. Yuan et al., EFFECT OF BIAS ANNEALING ON AU N-SI SCHOTTKY-BARRIER WITH HYDROGEN INCORPORATION/, Journal of applied physics, 76(9), 1994, pp. 5592-5594

Authors: YUAN MH SONG HZ JIN SX WANG HP QIAO YP QIN GG

Citation: Mh. Yuan et al., EFFECT OF REVERSE-BIAS ANNEALING AND ZERO-BIAS ANNEALING ON A HYDROGEN-CONTAINING AU (N-TYPE GAAS) SCHOTTKY-BARRIER/, Physical review. B, Condensed matter, 48(24), 1993, pp. 17986-17994

Authors: JIN SX WANG HP YUAN MH SONG HZ WANG H MAO WL QIN GG REN ZY LI BC HU XW SUN GS

Citation: Sx. Jin et al., CONTROLLING OF SCHOTTKY-BARRIER HEIGHTS FOR AU N-GAAS AND TI/N-GAAS WITH HYDROGEN INTRODUCED AFTER METAL-DEPOSITION BY BIAS ANNEALING/, Applied physics letters, 62(21), 1993, pp. 2719-2721