Authors: Li, XJ Yan, FW Zhang, WJ Zhang, RG Liu, WJ Ao, JP Zeng, QM Liu, SY Liang, CG

Citation: Xj. Li et al., Field effect transistor with self-organized In0.15Ga0.85As/GaAs quantum wires as a channel grown on (553)B GaAs substrates, CHIN PHYS L, 18(8), 2001, pp. 1147-1149

Authors: Yan, FW Zhang, WJ Zhang, RG Cui, LQ Liang, CG Liu, SY

Citation: Fw. Yan et al., Surface corrugation of In0.15Ga0.85As layers grown on (553)B-oriented GaAssubstrates by molecular beam epitaxy, J CRYST GR, 224(1-2), 2001, pp. 47-51

Authors: Yan, FW Zhang, WJ Zhang, RG Cui, LQ Liang, CG Liu, SY

Citation: Fw. Yan et al., Formation and characterization of (553)B In0.15Ga0.85As/GaAs quantum wire structure, J APPL PHYS, 90(3), 2001, pp. 1403-1406

Authors: Yan, FW Li, XJ Zhang, WJ Zhang, RG Liu, WJ Ao, JP Liang, CG Liu, SY

Citation: Fw. Yan et al., Self-organized (553)B In0.15Ga0.85As/GaAs quantum-wire field-effect transistors, APPL PHYS L, 78(18), 2001, pp. 2793-2795