Authors:
Sachse, JU
Sveinbjornsson, EO
Yarykin, N
Weber, J
Citation: Ju. Sachse et al., Similarities in the electrical properties of transition metal-hydrogen complexes in silicon, MAT SCI E B, 58(1-2), 1999, pp. 134-140
Citation: N. Yarykin et al., The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K, APPL PHYS L, 75(2), 1999, pp. 241-243
Authors:
Cho, CR
Yarykin, N
Brown, RA
Kononchuk, O
Rozgonyi, GA
Zuhr, RA
Citation: Cr. Cho et al., Evolution of deep-level centers in p-type silicon following ion implantation at 85 K, APPL PHYS L, 74(9), 1999, pp. 1263-1265
Authors:
Kononchuk, O
Korablev, KG
Yarykin, N
Rozgonyi, GA
Citation: O. Kononchuk et al., Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures, APPL PHYS L, 73(9), 1998, pp. 1206-1208