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Results:
1-8
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Results: 8
Authors:
Sachse, JU
Sveinbjornsson, EO
Yarykin, N
Weber, J
Citation: Ju. Sachse et al., Similarities in the electrical properties of transition metal-hydrogen complexes in silicon, MAT SCI E B, 58(1-2), 1999, pp. 134-140
Authors:
Feklisova, O
Yarykin, N
Yakimov, E
Weber, J
Citation: O. Feklisova et al., Hydrogen interaction with defects in electron-irradiated silicon, PHYSICA B, 274, 1999, pp. 235-238
Authors:
Koveshnikov, S
Choi, B
Yarykin, N
Rozgonyi, G
Citation: S. Koveshnikov et al., Drift of interstitial iron in a space charge region of p-type Si Schottky diode, PHYSICA B, 274, 1999, pp. 395-397
Authors:
Yarykin, N
Cho, CR
Zuhr, R
Rozgonyi, G
Citation: N. Yarykin et al., In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions, PHYSICA B, 274, 1999, pp. 485-488
Authors:
Yarykin, N
Sachse, JU
Lemke, H
Weber, J
Citation: N. Yarykin et al., Silver-hydrogen interactions in crystalline silicon, PHYS REV B, 59(8), 1999, pp. 5551-5560
Authors:
Yarykin, N
Cho, CR
Rozgonyi, GA
Zuhr, RA
Citation: N. Yarykin et al., The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K, APPL PHYS L, 75(2), 1999, pp. 241-243
Authors:
Cho, CR
Yarykin, N
Brown, RA
Kononchuk, O
Rozgonyi, GA
Zuhr, RA
Citation: Cr. Cho et al., Evolution of deep-level centers in p-type silicon following ion implantation at 85 K, APPL PHYS L, 74(9), 1999, pp. 1263-1265
Authors:
Kononchuk, O
Korablev, KG
Yarykin, N
Rozgonyi, GA
Citation: O. Kononchuk et al., Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures, APPL PHYS L, 73(9), 1998, pp. 1206-1208
Risultati:
1-8
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