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Results:
1-21
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Results: 21
Authors:
Saburi, Y
Mori, A
Yasui, I
Makino, T
Iwabuchi, M
Citation: Y. Saburi et al., Fetal aortic blood flow assessment from the relationship between fetal aortic diameter pulse and flow velocity waveforms during fetal development, EAR HUM DEV, 65(1), 2001, pp. 57-70
Authors:
Nakazawa, K
Katayama, K
Sakamura, H
Yasui, I
Citation: K. Nakazawa et al., Control of HCl generated by the poly(vinyl chloride) combustion, NIP KAG KAI, (1), 2001, pp. 45-53
Authors:
Kamei, M
Enomoto, H
Yasui, I
Citation: M. Kamei et al., Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films, THIN SOL FI, 392(2), 2001, pp. 265-268
Authors:
Kawamura, F
Yasui, I
Sunagawa, I
Citation: F. Kawamura et al., Effects of supersaturation and impurity on step advancement on TiO2 (110) faces grown from high-temperature solution, J CRYST GR, 233(3), 2001, pp. 517-522
Authors:
Kawamura, F
Takahashi, T
Yasui, I
Sunagawa, I
Citation: F. Kawamura et al., Impurity effect on < 111 > and < 110 > directions of growing SnO2 single crystals in SnO2-CU2O flux System, J CRYST GR, 233(1-2), 2001, pp. 259-268
Authors:
Kawamura, F
Yasui, I
Sunagawa, I
Citation: F. Kawamura et al., Investigations on the growth and morphology of TiO2 in the TiO2-Na2B4O7 system with and without impurities using a new LPE method, J CRYST GR, 231(1-2), 2001, pp. 186-193
Authors:
Kawamura, F
Yasui, I
Kamei, M
Sunagawa, I
Citation: F. Kawamura et al., Habit modifications of SnO2 crystals in SnO2-Cu2O flux system in the presence of trivalent impurity cations, J AM CERAM, 84(6), 2001, pp. 1341-1346
Authors:
Yamada, N
Yasui, I
Shigesato, Y
Li, HL
Ujihira, Y
Nomura, K
Citation: N. Yamada et al., Donor compensation and carrier-transport mechanisms in tin-doped In2O3 films studied by means of conversion electron Sn-119 Mossbauer spectroscopy and Hall effect measurements, JPN J A P 1, 39(7A), 2000, pp. 4158-4163
Authors:
Shigesato, Y
Shin, N
Kamei, M
Song, PK
Yasui, I
Citation: Y. Shigesato et al., Study on fluorine-doped indium oxide films deposited by RF magnetron sputtering, JPN J A P 1, 39(11), 2000, pp. 6422-6426
Authors:
Song, PK
Akao, H
Kamei, M
Shigesato, Y
Yasui, I
Citation: Pk. Song et al., Preparation and crystallization of tin-doped and undoped amorphous indium oxide films deposited by sputtering, JPN J A P 1, 38(9A), 1999, pp. 5224-5226
Authors:
Yamada, N
Yasui, I
Citation: N. Yamada et I. Yasui, Doping mechanisms of Sn in In2O3 powder studied using Sn-119 Mossbauer spectroscopy and X-ray diffraction, JPN J A P 1, 38(5A), 1999, pp. 2856-2862
Authors:
Song, PK
Shigesato, Y
Kamei, M
Yasui, I
Citation: Pk. Song et al., Electrical and structural properties of tin-doped indium oxide films deposited by DC sputtering at room temperature, JPN J A P 1, 38(5A), 1999, pp. 2921-2927
Authors:
Taga, N
Maekawa, M
Shigesato, Y
Yasui, I
Kamei, M
Haynes, TE
Citation: N. Taga et al., Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy (vol 37, pg 6524, 1998), JPN J A P 1, 38(3A), 1999, pp. 1596-1596
Authors:
Miyazaki, H
Kamei, M
Shigesato, Y
Yasui, I
Citation: H. Miyazaki et al., Influence of unbalanced magnetron and penning ionization for RF reactive magnetron sputtering, JPN J A P 1, 38(1A), 1999, pp. 186-191
Authors:
Futagami, T
Kamei, M
Yasui, I
Sugimoto, N
Hayashi, Y
Hayashi, A
Citation: T. Futagami et al., Photoluminescence of samarium-doped aluminosilicate thin films deposited by RF sputtering with a ceramic target, J CERAM S J, 107(8), 1999, pp. 707-710
Authors:
Futagami, T
Kamei, M
Yasui, I
Shigesato, Y
Sugimoto, N
Hayashi, Y
Citation: T. Futagami et al., Persistent spectral hole burning in samarium and aluminum codoped silica films prepared by RF sputtering, J CERAM S J, 107(5), 1999, pp. 494-496
Authors:
Miyazaki, H
Sakamura, H
Kamei, M
Yasui, I
Citation: H. Miyazaki et al., Electrochemical evaluation of oriented vanadium oxide films deposited by reactive rf magnetron sputtering, SOL ST ION, 122(1-4), 1999, pp. 223-229
Authors:
Miyazaki, H
Kamei, M
Yasui, I
Citation: H. Miyazaki et al., Vanadium oxide thin films deposited onto Cu buffer layer by RF magnetron sputtering, THIN SOL FI, 344, 1999, pp. 168-170
Authors:
Kawamura, F
Kamei, M
Yasui, I
Sunagawa, I
Citation: F. Kawamura et al., Effect of impurity cations on the growth and habits of SnO2 crystals in the SnO2-Cu2O flux system, J AM CERAM, 82(3), 1999, pp. 774-776
Authors:
Taga, N
Maekawa, M
Shigesato, Y
Yasui, I
Kakei, M
Haynes, TE
Citation: N. Taga et al., Deposition of heteroepitaxial In2O3 thin films by molecular beam epitaxy, JPN J A P 1, 37(12A), 1998, pp. 6524-6529
Authors:
Taga, N
Maekawa, M
Kamei, M
Yasui, I
Shigesato, Y
Citation: N. Taga et al., Effect of Sn doping on the crystal growth of indium oxide films, JPN J A P 1, 37(12A), 1998, pp. 6585-6586
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