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Results: 1-10 |
Results: 10
Development of a solid-phase binding assay and identification of nonpeptide ligands for the FynB Src homology 2 domain
Authors: Kim, HJ Lee, HH Yoo, HD Lee, JH Hong, ST
Citation: Hj. Kim et al., Development of a solid-phase binding assay and identification of nonpeptide ligands for the FynB Src homology 2 domain, J PHARM B, 27(1-2), 2002, pp. 51-56
Behavior of thermally induced defects in heavily boron-doped silicon crystals
Authors: Kim, JM Choi, JY Cho, HJ Lee, HW Yoo, HD
Citation: Jm. Kim et al., Behavior of thermally induced defects in heavily boron-doped silicon crystals, JPN J A P 1, 40(3A), 2001, pp. 1370-1374
The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction
Authors: Lee, DK Hwang, DH Lee, SH Mun, YH Lee, BY Yoo, HD
Citation: Dk. Lee et al., The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction, MAT SC S PR, 4(1-3), 2001, pp. 47-49
Collection efficiency of metallic contaminants on Si wafer by vapor-phase decomposition-droplet collection
Authors: Chung, HY Kim, YH Cho, HY Lee, BY Yoo, HD Lee, SH
Citation: Hy. Chung et al., Collection efficiency of metallic contaminants on Si wafer by vapor-phase decomposition-droplet collection, ANAL SCI, 17(5), 2001, pp. 653-658
Behavior of laser scattering tomography defects along the radial and the in-depth directions in a CZ Si wafer with ring-OSF
Authors: Lee, SH Lee, DK Hwang, DH Lee, JE Lee, BY Yoo, HD
Citation: Sh. Lee et al., Behavior of laser scattering tomography defects along the radial and the in-depth directions in a CZ Si wafer with ring-OSF, J KOR PHYS, 38(4), 2001, pp. 366-370
Evaluation of citric acid added cleaning solution for removal of metallic contaminants on Si wafer surface
Authors: Chung, HY Kim, KS Cho, HY Lee, BY Yoo, HD Lee, SH
Citation: Hy. Chung et al., Evaluation of citric acid added cleaning solution for removal of metallic contaminants on Si wafer surface, KOR J CHEM, 18(3), 2001, pp. 342-346
Numerical analysis for the dynamics of the oxidation-induced stacking fault in Czochralski-grown silicon crystals
Authors: Wang, JH Oh, HJ Yoo, HD
Citation: Jh. Wang et al., Numerical analysis for the dynamics of the oxidation-induced stacking fault in Czochralski-grown silicon crystals, KOR J CHEM, 18(1), 2001, pp. 81-87
Gate-oxide-integrity characteristics of vacancy-rich wafer compared with crystal-originated-pits-free wafer as a function of oxide thickness
Authors: Lee, KS Cho, WJ Lee, BY Yoo, HD
Citation: Ks. Lee et al., Gate-oxide-integrity characteristics of vacancy-rich wafer compared with crystal-originated-pits-free wafer as a function of oxide thickness, JPN J A P 1, 39(7A), 2000, pp. 4053-4058
Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers
Authors: Hwang, DH Lee, BY Yoo, HD Kwon, OJ
Citation: Dh. Hwang et al., Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers, J CRYST GR, 213(1-2), 2000, pp. 57-62
Two-dimensional analysis of axial segregation in batchwise and continuous Czochralski process
Authors: Wang, JH Kim, DH Yoo, HD
Citation: Jh. Wang et al., Two-dimensional analysis of axial segregation in batchwise and continuous Czochralski process, J CRYST GR, 199, 1999, pp. 120-124
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