AAAAAA

   
Results: 1-11 |
Results: 11
Development of Al-free ohmic contact to n-GaN
Authors: Kim, DW Bae, JC Kim, WJ Baik, HK Kim, CY Kim, W Choi, YH Kim, CK Yoo, TK Hong, CH Lee, SM
Citation: Dw. Kim et al., Development of Al-free ohmic contact to n-GaN, J ELEC MAT, 30(7), 2001, pp. 855-860
Scribing and cutting a blue LED wafer using a Q-switched Nd : YAG laser
Authors: Lee, JM Jang, JH Yoo, TK
Citation: Jm. Lee et al., Scribing and cutting a blue LED wafer using a Q-switched Nd : YAG laser, APPL PHYS A, 70(5), 2000, pp. 561-564
Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity
Authors: Kim, JW Oh, JE Hong, SC Park, CH Yoo, TK
Citation: Jw. Kim et al., Room temperature far infrared (8 similar to 10 mu m) photodetectors using self-assembled InAs quantum dots with high detectivity, IEEE ELEC D, 21(7), 2000, pp. 329-331
Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation
Authors: Kim, C Yang, M Yi, J Kim, M Song, H Jeon, J Choi, Y Yoo, TK Leem, SJ
Citation: C. Kim et al., Cathodoluminescence characteristics of large-scale in-rich InGaN grains and effect of low-energy electron-beam irradiation, J KOR PHYS, 37(6), 2000, pp. 846-849
Cathodoluminescence characterization of GaN thick films grown by using theHVPE method
Authors: Kim, HM Choi, JS Oh, JE Yoo, TK
Citation: Hm. Kim et al., Cathodoluminescence characterization of GaN thick films grown by using theHVPE method, J KOR PHYS, 37(6), 2000, pp. 956-960
Long-standing ureteral metastasis secondary to adenocarcinoma of the prostate after bilateral orchiectomty
Authors: Jung, JY Kim, HK Roh, YT Choi, DY Yoo, TK Kim, EK
Citation: Jy. Jung et al., Long-standing ureteral metastasis secondary to adenocarcinoma of the prostate after bilateral orchiectomty, J UROL, 164(4), 2000, pp. 1298-1299
Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy
Authors: Kim, C Yang, M Lee, W Yi, J Kim, S Choi, Y Yoo, TK Kim, ST
Citation: C. Kim et al., Formation and characteristics of inversion domain in GaN grown by hydride vapor-phase epitaxy, J CRYST GR, 213(3-4), 2000, pp. 235-240
Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy
Authors: Kim, C Yi, J Kim, S Kim, MH Yang, M Choi, Y Yoo, TK Kim, ST
Citation: C. Kim et al., Relaxation of anisotropic domain tilting along vertical growth direction in selectively lateral overgrown GaN by hydride vapor phase epitaxy, J CRYST GR, 208(1-4), 2000, pp. 804-808
Polymeric tunable optical attenuator with an optical monitoring tap for WDM transmission network
Authors: Lee, SS Jin, YS Son, YS Yoo, TK
Citation: Ss. Lee et al., Polymeric tunable optical attenuator with an optical monitoring tap for WDM transmission network, IEEE PHOTON, 11(5), 1999, pp. 590-592
Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor deposition
Authors: Kim, CY Kim, SW Yi, JY Choi, YH Yoo, TK Hong, CH
Citation: Cy. Kim et al., Dependence of optical property on the defects in Si-doped GaN grown by metal organic chemical vapor deposition, J KOR PHYS, 34, 1999, pp. S370-S373
Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperature
Authors: Kim, ST Lee, YJ Moon, DC Hong, CH Yoo, TK
Citation: St. Kim et al., Fabrication of freestanding GaN by HVPE and optically pumped stimulated emission at room temperature, SEMIC SCI T, 14(3), 1999, pp. 278-282
Risultati: 1-11 |