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Results: 1-14 |
Results: 14
OVERLAYER CORRECTIONS IN XPS
Authors: ZALM PC
Citation: Pc. Zalm, OVERLAYER CORRECTIONS IN XPS, Surface and interface analysis, 26(5), 1998, pp. 352-358
X-RAY-INDUCED METAL REDUCTION IN POLYMER HOSTS
Authors: VREUGDENHIL F HAGENHOFF B ZALM PC
Citation: F. Vreugdenhil et al., X-RAY-INDUCED METAL REDUCTION IN POLYMER HOSTS, Surface and interface analysis, 25(1), 1997, pp. 46-49
GEXSI1-X INFRARED DETECTORS .1. ABSORPTION IN MULTIPLE-QUANTUM-WELL AND HETEROJUNCTION INTERNAL PHOTOEMISSION STRUCTURES
Authors: STRONG R MISRA R GREVE DW ZALM PC
Citation: R. Strong et al., GEXSI1-X INFRARED DETECTORS .1. ABSORPTION IN MULTIPLE-QUANTUM-WELL AND HETEROJUNCTION INTERNAL PHOTOEMISSION STRUCTURES, Journal of applied physics, 82(10), 1997, pp. 5191-5198
CAN CARBON-IMPLANTED SILICON BE APPLIED AS WIDE-BANDGAP EMITTER
Authors: OOSTRA DJ POLITIEK J BULLELIEUWMA CWT VANDENHOUDT DEW ZALM PC
Citation: Dj. Oostra et al., CAN CARBON-IMPLANTED SILICON BE APPLIED AS WIDE-BANDGAP EMITTER, Journal of materials research, 11(7), 1996, pp. 1653-1658
PROXIMITY GETTERING OF TRANSITION-METALS IN SILICON BY ION-IMPLANTATION
Authors: OVERWIJK MHF POLITIEK J DEKRUIF RCM ZALM PC
Citation: Mhf. Overwijk et al., PROXIMITY GETTERING OF TRANSITION-METALS IN SILICON BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 257-260
USING SIMS TO DETECT CONTAMINATION SOURCES FROM ION IMPLANTERS
Authors: STEVIE FA WILSON RG SIMONS DS CURRENT MI ZALM PC
Citation: Fa. Stevie et al., USING SIMS TO DETECT CONTAMINATION SOURCES FROM ION IMPLANTERS, Solid state technology, 38(5), 1995, pp. 51
ULTRA-SHALLOW DOPING PROFILING WITH SIMS
Authors: ZALM PC
Citation: Pc. Zalm, ULTRA-SHALLOW DOPING PROFILING WITH SIMS, Reports on progress in physics, 58(10), 1995, pp. 1321-1374
REVIEW OF SECONDARY-ION MASS-SPECTROMETRY CHARACTERIZATION OF CONTAMINATION ASSOCIATED WITH ION-IMPLANTATION
Authors: STEVIE FA WILSON RG SIMONS DS CURRENT MI ZALM PC
Citation: Fa. Stevie et al., REVIEW OF SECONDARY-ION MASS-SPECTROMETRY CHARACTERIZATION OF CONTAMINATION ASSOCIATED WITH ION-IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2263-2279
SECONDARY-ION MASS-SPECTROMETRY
Authors: ZALM PC
Citation: Pc. Zalm, SECONDARY-ION MASS-SPECTROMETRY, Vacuum, 45(6-7), 1994, pp. 753-772
DIFFUSION IN STRAINED SI(GE)
Authors: COWERN NEB ZALM PC VANDERSLUIS P GRAVESTEIJN DJ DEBOER WB
Citation: Neb. Cowern et al., DIFFUSION IN STRAINED SI(GE), Physical review letters, 72(16), 1994, pp. 2585-2588
MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI
Authors: COWERN NEB VANDEWALLE GFA ZALM PC VANDENHOUDT DWE
Citation: Neb. Cowern et al., MECHANISMS OF IMPLANT DAMAGE ANNEALING AND TRANSIENT ENHANCED DIFFUSION IN SI, Applied physics letters, 65(23), 1994, pp. 2981-2983
NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES
Authors: VANDORT MJ LIFKA H ZALM PC DEBOER WB WOERLEE PH SLOTBOOM JW COWERN NEB
Citation: Mj. Vandort et al., NEW TECHNIQUE FOR MEASURING 2-DIMENSIONAL OXIDATION-ENHANCED DIFFUSION IN SILICON AT LOW-TEMPERATURES, Applied physics letters, 64(16), 1994, pp. 2130-2132
PROBLEMS IN THE DECONVOLUTION OF SIMS DEPTH PROFILES USING DELTA-DOPED TEST STRUCTURES
Authors: ZALM PC DEKRUIF RCM
Citation: Pc. Zalm et Rcm. Dekruif, PROBLEMS IN THE DECONVOLUTION OF SIMS DEPTH PROFILES USING DELTA-DOPED TEST STRUCTURES, Applied surface science, 70-1, 1993, pp. 73-78
THE APPLICATION OF DYNAMIC SIMS IN SILICON SEMICONDUCTOR TECHNOLOGY
Authors: ZALM PC
Citation: Pc. Zalm, THE APPLICATION OF DYNAMIC SIMS IN SILICON SEMICONDUCTOR TECHNOLOGY, Philips journal of research, 47(3-5), 1993, pp. 287-302
Risultati: 1-14 |