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Results: 1-25 | 26-38
Results: 1-25/38
EFFECT OF ATOMIC-HYDROGEN ON ER LUMINESCENCE FROM ALN
Authors: PEARTON SJ ABERNATHY CR MACKENZIE JD HOMMERICH U ZAVADA JM WILSON RG SCHWARTZ RN
Citation: Sj. Pearton et al., EFFECT OF ATOMIC-HYDROGEN ON ER LUMINESCENCE FROM ALN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1627-1630
EFFECT OF CRYSTAL PHASES ON REFRACTIVE-INDEX PROFILES OF ANNEALED PROTON-EXCHANGED WAVE-GUIDES IN X-CUT LITAO3
Authors: MARING DB TAVLYKAEV RF RAMASWAMY RV KORKISHKO YN FEDOROV VA ZAVADA JM
Citation: Db. Maring et al., EFFECT OF CRYSTAL PHASES ON REFRACTIVE-INDEX PROFILES OF ANNEALED PROTON-EXCHANGED WAVE-GUIDES IN X-CUT LITAO3, Applied physics letters, 73(4), 1998, pp. 423-425
EFFECT OF CRYSTAL PHASES ON REFRACTIVE-INDEX PROFILES OF ANNEALED PROTON-EXCHANGED WAVE-GUIDES IN X-CUT LITAO3 (VOL 73, PG 423, 1998)
Authors: MARING DB TAVLYKAEV RF RAMASWAMY RV KORKISHKO YN FEDOROV VA ZAVADA JM
Citation: Db. Maring et al., EFFECT OF CRYSTAL PHASES ON REFRACTIVE-INDEX PROFILES OF ANNEALED PROTON-EXCHANGED WAVE-GUIDES IN X-CUT LITAO3 (VOL 73, PG 423, 1998), Applied physics letters, 73(16), 1998, pp. 2380-2380
THERMAL-STABILITY OF H-2-IMPLANTED N-TYPE AND P-TYPE GAN
Authors: PEARTON SJ WILSON RG ZAVADA JM HAN J SHUL RJ
Citation: Sj. Pearton et al., THERMAL-STABILITY OF H-2-IMPLANTED N-TYPE AND P-TYPE GAN, Applied physics letters, 73(13), 1998, pp. 1877-1879
ER DOPING OF GAN DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY
Authors: MACKENZIE JD ABERNATHY CR PEARTON SJ HOMMERICH U SEO JT WILSON RG ZAVADA JM
Citation: Jd. Mackenzie et al., ER DOPING OF GAN DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 72(21), 1998, pp. 2710-2712
HYDROGEN INCORPORATION AND ITS TEMPERATURE STABILITY IN SIC CRYSTALS
Authors: ZAVADA JM WILSON RG REN F PEARTON SJ DAVIS RF
Citation: Jm. Zavada et al., HYDROGEN INCORPORATION AND ITS TEMPERATURE STABILITY IN SIC CRYSTALS, Solid-state electronics, 41(5), 1997, pp. 677-679
MICRODISK LASER STRUCTURES FORMED IN III-V NITRIDE EPILAYERS
Authors: ZAVADA JM ABERNATHY CR PEARTON SJ MACKENZIE JD MILEHAM JR WILSON RG SCHWARTZ RN HAGGEROTTCRAWFORD M SHUL RJ KILCOYNE SP ZHANG D KOLBAS RM
Citation: Jm. Zavada et al., MICRODISK LASER STRUCTURES FORMED IN III-V NITRIDE EPILAYERS, Solid-state electronics, 41(2), 1997, pp. 353-357
STABILITY OF HYDROGEN IN SCALMGO4
Authors: BRANDLE CD REN F WILSON RG LEE JW PEARTON SJ ZAVADA JM
Citation: Cd. Brandle et al., STABILITY OF HYDROGEN IN SCALMGO4, Solid-state electronics, 41(12), 1997, pp. 1943-1945
PHOTOLUMINESCENCE STUDY OF ER-DOPED ALN
Authors: WU X HOMMERICH U MACKENZIE JD ABERNATHY CR PEARTON SJ WILSON RG SCHWARTZ RN ZAVADA JM
Citation: X. Wu et al., PHOTOLUMINESCENCE STUDY OF ER-DOPED ALN, Journal of luminescence, 72-4, 1997, pp. 284-286
ER DOPING OF III-NITRIDES DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY
Authors: MACKENZIE JD ABERNATHY CR PEARTON SJ HOMMERICH U WU X SCHWARTZ RN WILSON RG ZAVADA JM
Citation: Jd. Mackenzie et al., ER DOPING OF III-NITRIDES DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 175, 1997, pp. 84-88
CHANNEL OPTICAL WAVE-GUIDES FORMED BY DEUTERIUM PASSIVATION IN GAAS AND INP
Authors: KUMAR M BOYD JT JACKSON HE ZAVADA JM JENKINSON HA WILSON RG THEYS B CHEVALLIER J
Citation: M. Kumar et al., CHANNEL OPTICAL WAVE-GUIDES FORMED BY DEUTERIUM PASSIVATION IN GAAS AND INP, Journal of applied physics, 82(7), 1997, pp. 3205-3213
THE EFFECTS OF OXIDATION TEMPERATURE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF OXIDIZED ALN FILMS ON SI
Authors: KOLODZEY J CHOWDHURY EA QUI G OLOWOLAFE J SWANN CP UNRUH KM SUEHLE J WILSON RG ZAVADA JM
Citation: J. Kolodzey et al., THE EFFECTS OF OXIDATION TEMPERATURE ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF OXIDIZED ALN FILMS ON SI, Applied physics letters, 71(26), 1997, pp. 3802-3804
PHOTOLUMINESCENCE SPECTROSCOPY OF ERBIUM IMPLANTED GALLIUM NITRIDE
Authors: THAIK M HOMMERICH U SCHWARTZ RN WILSON RG ZAVADA JM
Citation: M. Thaik et al., PHOTOLUMINESCENCE SPECTROSCOPY OF ERBIUM IMPLANTED GALLIUM NITRIDE, Applied physics letters, 71(18), 1997, pp. 2641-2643
LUMINESCENCE ENHANCEMENT IN ALN(ER) BY HYDROGENATION
Authors: PEARTON SJ ABERNATHY CR MACKENZIE JD HOMMERICH U WU X WILSON RG SCHWARTZ RN ZAVADA JM REN F
Citation: Sj. Pearton et al., LUMINESCENCE ENHANCEMENT IN ALN(ER) BY HYDROGENATION, Applied physics letters, 71(13), 1997, pp. 1807-1809
DIRECT AND INDIRECT EXCITATION OF ER3-ALN( IONS IN ER)
Authors: WU X HOMMERICH U MACKENZIE JD ABERNATHY CR PEARTON SJ SCHWARTZ RN WILSON RG ZAVADA JM
Citation: X. Wu et al., DIRECT AND INDIRECT EXCITATION OF ER3-ALN( IONS IN ER), Applied physics letters, 70(16), 1997, pp. 2126-2128
ETCHING PROCESSES FOR FABRICATION OF GAN INGAN/ALN MICRODISK LASER STRUCTURES/
Authors: LEE JW VARTULI CB ABERNATHY CR MACKENZIE JD MILEHAM JR PEARTON SJ SHUL RJ ZOLPER JC HAGEROTTCRAWFORD M ZAVADA JM WILSON RG SCHWARTZ RN
Citation: Jw. Lee et al., ETCHING PROCESSES FOR FABRICATION OF GAN INGAN/ALN MICRODISK LASER STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3637-3640
PROCESS-DEVELOPMENT FOR III-V NITRIDES
Authors: PEARTON SJ ABERNATHY CR REN F SHUL RJ KILCOYNE SP HAGEROTTCRAWFORD M ZOLPER JC WILSON RG SCHWARTZ RG ZAVADA JM
Citation: Sj. Pearton et al., PROCESS-DEVELOPMENT FOR III-V NITRIDES, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 138-146
UNINTENTIONAL HYDROGENATION OF GAN AND RELATED ALLOYS DURING PROCESSING
Authors: PEARTON SJ ABERNATHY CR VARTULI CB LEE JW MACKENZIE JD WILSON RG SHUL RJ REN F ZAVADA JM
Citation: Sj. Pearton et al., UNINTENTIONAL HYDROGENATION OF GAN AND RELATED ALLOYS DURING PROCESSING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(3), 1996, pp. 831-835
THE INCORPORATION OF HYDROGEN INTO III-V NITRIDES DURING PROCESSING
Authors: PEARTON SJ SHUL RJ WILSON RG REN F ZAVADA JM ABERNATHY CR VARTULI CB LEE JW MILEHAM JR MACKENZIE JD
Citation: Sj. Pearton et al., THE INCORPORATION OF HYDROGEN INTO III-V NITRIDES DURING PROCESSING, Journal of electronic materials, 25(5), 1996, pp. 845-849
GROWTH AND FABRICATION OF GAN-INGAN MICRODISK LASER STRUCTURES
Authors: ABERNATHY CR PEARTON SJ MACKENZIE JD MILEHAM JR BHARATAN SR KRISHNAMOORTHY V JONES KS HAGEROTTCRAWFORD M SHUL RJ KILCOYNE SP ZAVADA JM ZHANG D KOLBAS RM
Citation: Cr. Abernathy et al., GROWTH AND FABRICATION OF GAN-INGAN MICRODISK LASER STRUCTURES, Solid-state electronics, 39(2), 1996, pp. 311-313
WET AND DRY-ETCHING OF LIGAO2 AND LIALO2
Authors: LEE JW PEARTON SJ ABERNATHY CR ZAVADA JM CHAI BLH
Citation: Jw. Lee et al., WET AND DRY-ETCHING OF LIGAO2 AND LIALO2, Journal of the Electrochemical Society, 143(8), 1996, pp. 169-171
THERMAL-STABILITY OF HYDROGEN IN LIALO2 AND LIGAO2
Authors: WILSON RG CHAI BLH PEARTON SJ ABERNATHY CR REN F ZAVADA JM
Citation: Rg. Wilson et al., THERMAL-STABILITY OF HYDROGEN IN LIALO2 AND LIGAO2, Applied physics letters, 69(25), 1996, pp. 3848-3850
ER DOPING OF ALN DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY
Authors: MACKENZIE JD ABERNATHY CR PEARTON SJ HOMMERICH U WU X SCHWARTZ RN WILSON RG ZAVADA JM
Citation: Jd. Mackenzie et al., ER DOPING OF ALN DURING GROWTH BY METALORGANIC MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(14), 1996, pp. 2083-2085
DOMINANCE OF TUNNELING CURRENT AND BAND FILLING IN INGAN ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES/
Authors: CASEY HC MUTH J KRISHNANKUTTY S ZAVADA JM
Citation: Hc. Casey et al., DOMINANCE OF TUNNELING CURRENT AND BAND FILLING IN INGAN ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES/, Applied physics letters, 68(20), 1996, pp. 2867-2869
OUTDIFFUSION OF DEUTERIUM FROM GAN, ALN, AND INN
Authors: WILSON RG PEARTON SJ ABERNATHY CR ZAVADA JM
Citation: Rg. Wilson et al., OUTDIFFUSION OF DEUTERIUM FROM GAN, ALN, AND INN, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 719-723
Risultati: 1-25 | 26-38