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Results:
1-13
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Results: 13
Authors:
HANSER AD
WOLDEN CA
PERRY WG
ZHELEVA T
CARLSON EP
BANKS AD
THERRIEN RJ
DAVIS RF
Citation: Ad. Hanser et al., ANALYSIS OF REACTOR GEOMETRY AND DILUENT GAS-FLOW EFFECTS ON THE METALORGANIC VAPOR-PHASE EPITAXY OF ALN AND GAN THIN-FILMS ON ALPHA(6H)-SIC SUBSTRATES, Journal of electronic materials, 27(4), 1998, pp. 238-245
Authors:
GRUSS KA
ZHELEVA T
DAVIS RF
WATKINS TR
Citation: Ka. Gruss et al., CHARACTERIZATION OF ZIRCONIUM NITRIDE COATINGS DEPOSITED BY CATHODIC ARC SPUTTERING, Surface & coatings technology, 107(2-3), 1998, pp. 115-124
Authors:
JARRENDAHL K
SMITH SA
ZHELEVA T
KERN RS
DAVIS RF
Citation: K. Jarrendahl et al., GROWTH OF HIGHLY (0001)-ORIENTED ALUMINUM NITRIDE THIN-FILMS WITH SMOOTH SURFACES ON SILICON-CARBIDE BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Vacuum, 49(3), 1998, pp. 189-191
Authors:
PERRY WG
BREMSER MB
ZHELEVA T
LINTHICUM KJ
DAVIS RF
Citation: Wg. Perry et al., BIAXIAL STRAIN IN ALXGA1-XN GAN LAYERS DEPOSITED ON 6H-SIC/, Thin solid films, 324(1-2), 1998, pp. 107-114
Authors:
KAWAGUCHI Y
SHIMIZU M
YAMAGUCHI M
HIRAMATSU K
SAWAKI N
TAKI W
TSUDA H
KUWANO N
OKI K
ZHELEVA T
DAVIS RF
Citation: Y. Kawaguchi et al., THE FORMATION OF CRYSTALLINE DEFECTS AND CRYSTAL-GROWTH MECHANISM IN INXGA1-XN GAN HETEROSTRUCTURE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 190, 1998, pp. 24-28
Authors:
BREMSER MD
PERRY WG
ZHELEVA T
EDWARDS NV
NAM OH
PARIKH N
ASPNES DE
DAVIS RF
Citation: Md. Bremser et al., GROWTH, DOPING AND CHARACTERIZATION OF ALXGA1-XN THIN-FILM ALLOYS ON 6H-SIC(0001) SUBSTRATES, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 196-201
Authors:
EDWARDS NV
YOO SD
BREMSER MD
ZHELEVA T
HORTON MN
PERKINS NR
WEEKS TW
LIU H
STALL RA
KUECH TF
DAVIS RF
ASPNES DE
Citation: Nv. Edwards et al., SPECTRAL-ANALYSIS OF ABOVE-EDGE, BELOW-EDGE, AND NEAR-BAND-EDGE PHENOMENA IN GAN THIN-FILMS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 134-141
Authors:
PERRY WG
ZHELEVA T
BREMSER MD
DAVIS RF
SHAN W
SONG JJ
Citation: Wg. Perry et al., CORRELATION OF BIAXIAL STRAINS, BOUND EXCITON ENERGIES, AND DEFECT MICROSTRUCTURES IN GAN FILMS GROWN ON ALN 6H-SIC(0001) SUBSTRATES/, Journal of electronic materials, 26(3), 1997, pp. 224-231
Authors:
BALKAS CM
SITAR Z
ZHELEVA T
BERGMAN L
NEMANICH R
DAVIS RF
Citation: Cm. Balkas et al., SUBLIMATION GROWTH AND CHARACTERIZATION OF BULK ALUMINUM NITRIDE SINGLE-CRYSTALS, Journal of crystal growth, 179(3-4), 1997, pp. 363-370
Authors:
ZHELEVA T
OKTYABRSKY S
JAGANNADHAM K
VISPUTE RD
NARAYAN J
Citation: T. Zheleva et al., CHARACTERIZATION OF HIGHLY ORIENTED (110) TIN FILMS GROWN ON EPITAXIAL GE SI(001) HETEROSTRUCTURES/, Journal of materials research, 11(2), 1996, pp. 399-411
Authors:
TIWARI P
ZHELEVA T
NARAYAN J
Citation: P. Tiwari et al., SYNTHESIS AND CHARACTERIZATION OF PB(ZR0.54TI0.46)O3 THIN-FILMS ON (100)SI USING TEXTURED YBA2CU3O7-DELTA AND YTTRIA-STABILIZED ZIRCONIA BUFFER LAYERS BY LASER PHYSICAL VAPOR-DEPOSITION TECHNIQUE, Journal of electronic materials, 23(9), 1994, pp. 879-882
Authors:
ZHELEVA T
JAGANNADHAM K
NARAYAN J
Citation: T. Zheleva et al., EPITAXIAL-GROWTH IN LARGE-LATTICE-MISMATCH SYSTEMS, Journal of applied physics, 75(2), 1994, pp. 860-871
Authors:
TIWARI P
ZHELEVA T
NARAYAN J
Citation: P. Tiwari et al., PREPARATION OF PB(ZR0.54TI0.46)O3 THIN-FILMS ON (100)SI USING TEXTURED YBA2CU3O7-LAMBDA AND YTTRIA-STABILIZED ZIRCONIA BUFFER LAYERS BY LASER PHYSICAL VAPOR-DEPOSITION TECHNIQUE, Applied physics letters, 63(1), 1993, pp. 30-32
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1-13
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