Citation: Mp. Locher et al., STRUCTURE OF F(0)(980) FROM A COUPLED-CHANNEL ANALYSIS OF S-WAVE PI-PI SCATTERING, EUROPEAN PHYSICAL JOURNAL C-PARTICLES AND FIELDS, 4(2), 1998, pp. 317-326
Citation: Sf. Yoon et al., THE EFFECT OF ELASTIC STRAIN ON THE OPTICAL-PROPERTIES OF INGAP GAAS GROWN USING A VALVED PHOSPHORUS CRACKER CELL IN SOLID SOURCE MBE/, Journal of alloys and compounds, 280(1-2), 1998, pp. 299-305
Citation: Sf. Yoon et Hq. Zheng, OPTIMIZATION OF INP GROWTH BY MOLECULAR-BEAM EPITAXY USING A VALVE PHOSPHORUS CRACKER CELL, Journal of alloys and compounds, 269(1-2), 1998, pp. 241-245
Citation: Sf. Yoon et Hq. Zheng, CHARACTERISTICS OF INP EPITAXIAL LAYERS GROWN FROM SOLID PHOSPHORUS USING A VALVE PHOSPHORUS CRACKER CELL, Optical materials, 10(3), 1998, pp. 219-224
Citation: Sf. Yoon et Hq. Zheng, ELECTRICAL, OPTICAL AND SURFACE-MORPHOLOGY CHARACTERISTICS OF INP GROWN USING A VALVED PHOSPHORUS CRACKER CELL IN SOLID SOURCE MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 55(3), 1998, pp. 187-194
Authors:
NAWAZ M
HABIBI S
ZHENG HQ
RADHAKRISHNAN K
LEE KY
NG GI
Citation: M. Nawaz et al., DESIGN AND CHARACTERIZATION OF ALGAAS INGAAS/GAAS-BASED DOUBLE-HETEROJUNCTION PHEMT DEVICE/, Microwave and optical technology letters, 17(1), 1998, pp. 50-53
Citation: Mp. Locher et al., REPLY TO THE COMMENT CENTRAL PRODUCTION OF F(0)(980) IN PP-]PPX - ART. NO. 038504, Physical review. D. Particles and fields, 5803(3), 1998, pp. 8504
Citation: Sf. Yoon et Hq. Zheng, MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY INP LAYERS FROM SOLIDPHOSPHORUS USING A VALVED PHOSPHORUS CRACKER CELL, Materials chemistry and physics, 56(3), 1998, pp. 249-255
Citation: Sf. Yoon et al., ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING A VALVED PHOSPHORUS CRACKER CELL, Thin solid films, 326(1-2), 1998, pp. 233-237
Citation: Sf. Yoon et al., PHOTOLUMINESCENCE AND X-RAY-DIFFRACTION ANALYSIS OF IN1-X-YGAXALYAS INP STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Microelectronics, 29(8), 1998, pp. 519-524
Authors:
YOON SF
ZHANG PH
ZHENG HQ
RADHAKRISHNAN K
Citation: Sf. Yoon et al., V III RATIO EFFECTS ON THE GROWTH OF IN1-X-YGAXALYAS ON INP SUBSTRATES BY MOLECULAR-BEAM EPITAXY/, Microelectronics, 29(11), 1998, pp. 889-893
Authors:
YOON SF
ZHANG PH
ZHENG HQ
RADHAKRISHNAN K
NG GI
Citation: Sf. Yoon et al., THE EFFECTS OF BERYLLIUM DOPING IN INGAALAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 193(3), 1998, pp. 285-292
Citation: Sf. Yoon et al., EFFECTS OF SUBSTRATE-TEMPERATURE ON THE PROPERTIES OF IN0.48GA0.52P GROWN BY MOLECULAR-BEAM EPITAXY USING A VALVED PHOSPHORUS CRACKER CELL, Journal of crystal growth, 191(4), 1998, pp. 613-620
Authors:
YOON SF
ZHANG PH
ZHENG HQ
RADHAKRISHNAN K
Citation: Sf. Yoon et al., THE EFFECTS OF ARSENIC PRESSURE ON THE PROPERTIES OF IN1-X-YGAXALYAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 191(1-2), 1998, pp. 24-30
Citation: Sf. Yoon et al., ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN AT DIFFERENT CRACKING TEMPERATURE AND V III RATIO USING A VALVE PHOSPHORUS CRACKER CELL/, Journal of crystal growth, 186(4), 1998, pp. 475-479
Authors:
YOON SF
ZHANG PH
ZHENG HQ
RADHAKRISHNAN K
SWAMINATHAN S
Citation: Sf. Yoon et al., SUBSTRATE-TEMPERATURE EFFECTS ON THE GROWTH OF IN1-X-YGAXALYAS ON INPSUBSTRATES BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 186(3), 1998, pp. 315-321
Authors:
LIU Y
XIAO XR
ZENG YP
YAN CH
ZHENG HQ
SUN DZ
Citation: Y. Liu et al., PHOTOELECTRIC BEHAVIOR OF LATTICE-MATCHED GAAS ALXGA1-XAS QUANTUM-WELL ELECTRODES/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 40(5), 1997, pp. 540-545
Citation: Hq. Zheng et al., ALFALFA MOSAIC-VIRUS MOVEMENT PROTEIN INDUCES TUBULES IN PLANT-PROTOPLASTS, Molecular plant-microbe interactions, 10(8), 1997, pp. 1010-1014
Citation: Mp. Locher et al., PI-PI FINAL-STATE INTERACTION IN K-]PI-PI, PP-]PP-PI-PI, AND RELATED PROCESSES, Physical review. D. Particles and fields, 55(5), 1997, pp. 2894-2901
Citation: Hq. Zheng, A RENORMALIZATION-GROUP ANALYSIS OF THE HIGGS-BOSON WITH HEAVY FERMIONS AND COMPOSITENESS (VOL 378, PG 201, 1996), Physics letters. Section B, 382(4), 1996, pp. 448-448
Citation: Hq. Zheng, A RENORMALIZATION-GROUP ANALYSIS OF THE HIGGS-BOSON WITH HEAVY FERMIONS AND COMPOSITENESS, Physics letters. Section B, 378(1-4), 1996, pp. 201-206
Citation: Hq. Zheng et al., STRAIN-SPECIFIC REVERSE-TRANSCRIPTASE PCR ASSAY - MEANS TO DISTINGUISH CANDIDATE VACCINE FROM WILD-TYPE STRAINS OF RESPIRATORY SYNCYTIAL VIRUS, Journal of clinical microbiology, 34(2), 1996, pp. 334-337
Citation: Hq. Zheng, SPONTANEOUS BREAKING OF VECTOR SYMMETRIES AND THE NONDECOUPLING LIGHTHIGGS PARTICLE, Physical review. D. Particles and fields, 52(11), 1995, pp. 6500-6504
Citation: Hq. Zheng, LOW-ENERGY PROPERTIES OF THE HEAVY VECTOR FERMIONS AND ELECTROWEAK SYMMETRY-BREAKING, Physical review. D. Particles and fields, 51(1), 1995, pp. 251-259