Authors: GOLUBEV VG ZHERZDEV AV MOROZ GK PATSEKIN AV YAN DT

Citation: Vg. Golubev et al., STRONG PHOTOINDUCED INCREASE IN THE LUMINESCENCE INTENSITY OF ANODICALLY OXIDIZED POROUS SILICON, Semiconductors, 30(5), 1996, pp. 456-461

Authors: PIETRUSZKO SM OLSZEWSKI J ZHERZDEV AV

Citation: Sm. Pietruszko et al., DEPENDENCE OF THE EQUILIBRATION TEMPERATURE ON HYDROGEN CONTENT IN DOPED AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 445-448

Authors: PEVTSOV AB ZHERZDEV AV FEOKTISTOV NA JUSKA G MUSCHIK T SCHWARZ R

Citation: Ab. Pevtsov et al., ELECTROLUMINESCENCE IN A-SI1-XCX-H P-I-N STRUCTURES, International journal of electronics, 78(2), 1995, pp. 289-295

Authors: MOROZ GK ZHERZDEV AV

Citation: Gk. Moroz et Av. Zherzdev, MECHANISM FOR THE FORMATION OF POROUS SILICON, Semiconductors, 28(6), 1994, pp. 550-552

Authors: ZHERZDEV AV KUDOYAROVA VK MEDVEDEV AV MOROZ GK

Citation: Av. Zherzdev et al., ELECTROLUMINESCENT NUCLEUS ON POROUS SILI CON, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 87-90