Authors:
GOLUBEV VG
ZHERZDEV AV
MOROZ GK
PATSEKIN AV
YAN DT
Citation: Vg. Golubev et al., STRONG PHOTOINDUCED INCREASE IN THE LUMINESCENCE INTENSITY OF ANODICALLY OXIDIZED POROUS SILICON, Semiconductors, 30(5), 1996, pp. 456-461
Citation: Sm. Pietruszko et al., DEPENDENCE OF THE EQUILIBRATION TEMPERATURE ON HYDROGEN CONTENT IN DOPED AMORPHOUS-SILICON, Journal of non-crystalline solids, 200, 1996, pp. 445-448