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Citation: S. Dimitrijev et al., SUBSTRATE-BIAS-DEPENDENT THRESHOLD-VOLTAGE MODEL OF SHORT-CHANNEL MOSFET - COMMENT, Solid-state electronics, 38(1), 1995, pp. 267-267

Authors: ANDERSON SR ZUPAC D SCHRIMPF RD GALLOWAY KF

Citation: Sr. Anderson et al., THE SURFACE GENERATION HUMP IN IRRADIATED POWER MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2443-2451

Authors: KHOSROPOUR P GALLOWAY KF ZUPAC D SCHRIMPF RD CALVEL P

Citation: P. Khosropour et al., APPLICATION OF TEST METHOD 1019.4 TO NONHARDENED POWER MOSFETS, IEEE transactions on nuclear science, 41(3), 1994, pp. 555-560

Authors: ZUPAC D ANDERSON SR SCHRIMPF RD GALLOWAY KF

Citation: D. Zupac et al., DETERMINING THE DRAIN DOPING IN DMOS TRANSISTORS USING THE HUMP IN THE LEAKAGE CURRENT, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2326-2336

Authors: ZUPAC D POTE D SCHRIMPF RD GALLOWAY KF

Citation: D. Zupac et al., ANNEALING OF ESD-INDUCED DAMAGE IN POWER MOSFETS, Journal of electrostatics, 31(2-3), 1993, pp. 131-144

Authors: ZUPAC D GALLOWAY KF KHOSROPOUR P ANDERSON SR SCHRIMPF RD CALVEL P

Citation: D. Zupac et al., SEPARATION OF EFFECTS OF OXIDE-TRAPPED CHARGE AND INTERFACE-TRAPPED CHARGE ON MOBILITY IN IRRADIATED POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1307-1315