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Results:
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Results: 23
Authors:
Salviati, G
Armani, N
Cova, P
Meneghesso, G
Zanoni, E
Citation: G. Salviati et al., Correlation between hot-electron-stress-induced degradation and cathodoluminescence in InP-based HEMTs, MAT SCI E B, 80(1-3), 2001, pp. 289-293
Authors:
Meneghesso, G
Chini, A
Verzellesi, G
Cavallini, A
Canali, C
Zanoni, E
Citation: G. Meneghesso et al., Trap characterization in buried-gate n-channel 6H-SiC JFETs, IEEE ELEC D, 22(9), 2001, pp. 432-434
Authors:
Buttari, D
Chini, A
Meneghesso, G
Zanoni, E
Sawdai, D
Pavlidis, D
Hsu, SSH
Citation: D. Buttari et al., Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs, IEEE ELEC D, 22(5), 2001, pp. 197-199
Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs
Authors:
Sleiman, A
Di Carlo, A
Tocca, L
Lugli, P
Zandler, G
Meneghesso, G
Zanoni, E
Canali, C
Cetronio, A
Lanzieri, M
Peroni, M
Citation: A. Sleiman et al., Experimental and Monte Carlo analysis of near-breakdown phenomena in GaAs-based heterostructure FETs, SEMIC SCI T, 16(5), 2001, pp. 315-319
Authors:
Meneghesso, G
Chini, A
Zanoni, E
Citation: G. Meneghesso et al., Long term stability of InGaAs/AlInAs/GaAs methamorphic HEMTs, MICROEL REL, 41(9-10), 2001, pp. 1579-1584
Authors:
Sponton, L
Cerati, L
Croce, G
Chrappan, F
Contiero, C
Meneghesso, G
Zanoni, E
Citation: L. Sponton et al., ESD protection structures for BCD5 smart power technologies, MICROEL REL, 41(9-10), 2001, pp. 1683-1687
Authors:
Di Carlo, A
Rossi, L
Lugli, P
Zandler, G
Meneghesso, G
Jackson, M
Zanoni, E
Citation: A. Di Carlo et al., Monte Carlo study of the dynamic breakdown effects in HEMT's, IEEE ELEC D, 21(4), 2000, pp. 149-151
Authors:
Meneghesso, G
Luise, R
Buttari, D
Chini, A
Yokoyama, H
Suemitsu, T
Zanoni, E
Citation: G. Meneghesso et al., Parasitic effects and long term stability of InP-based HEMTs, MICROEL REL, 40(8-10), 2000, pp. 1715-1720
Authors:
Meneghesso, G
Ciappa, M
Malberti, P
Sponton, L
Croce, G
Contiero, C
Zanoni, E
Citation: G. Meneghesso et al., Overstress and electrostatic discharge in CMOS and BCD integrated circuits, MICROEL REL, 40(8-10), 2000, pp. 1739-1746
Authors:
Vendrame, L
Pavan, P
Corva, G
Nardi, A
Neviani, A
Zanoni, E
Citation: L. Vendrame et al., Degradation mechanisms in polysilicon emitter bipolar junction transistorsfor digital applications, MICROEL REL, 40(2), 2000, pp. 207-230
Authors:
Zanoni, E
Meneghesso, G
Menozzi, R
Citation: E. Zanoni et al., Electroluminescence and other diagnostic techniques for the study of hot-electron effects in compound semiconductor devices, J CRYST GR, 210(1-3), 2000, pp. 331-340
Authors:
Meneghesso, G
Grave, T
Manfredi, M
Pavesi, M
Canali, C
Zanoni, E
Citation: G. Meneghesso et al., Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMT's bymeans of electroluminescence, IEEE DEVICE, 47(1), 2000, pp. 2-10
Authors:
Zandler, G
Rossi, L
DiCarlo, A
Tocca, L
Bonfiglio, A
Brunori, M
Lugli, P
Meneghesso, G
Zanoni, E
Citation: G. Zandler et al., Monte Carlo simulation of impact ionization and light emission in pseudomorphic HEMTs, PHYSICA B, 272(1-4), 1999, pp. 558-561
Authors:
Nardi, A
Neviani, A
Zanoni, E
Quarantelli, M
Guardiani, C
Citation: A. Nardi et al., Impact of unrealistic worst case modeling on the performance of VLSI circuits in deep submicron CMOS technologies, IEEE SEMIC, 12(4), 1999, pp. 396-402
Authors:
Gaddi, R
Meneghesso, G
Pavesi, M
Peroni, M
Canali, C
Zanoni, E
Citation: R. Gaddi et al., Electroluminescence analysis of HFET's breakdown, IEEE ELEC D, 20(7), 1999, pp. 372-374
Authors:
Santirosi, S
Meneghesso, G
Novarini, E
Contiero, C
Zanoni, E
Citation: S. Santirosi et al., HBM and TLP ESD robustness in smart-power protection structures, MICROEL REL, 39(6-7), 1999, pp. 839-844
Authors:
Cova, P
Meneghesso, G
Salviati, G
Zanoni, E
Citation: P. Cova et al., Cathodoluminescence from hot electron stressed InPHEMTs, MICROEL REL, 39(6-7), 1999, pp. 1073-1078
Authors:
Zanoni, E
Citation: E. Zanoni, Special section: EU Research Project Prophecy Papers - Foreword, MICROEL REL, 39(5), 1999, pp. 595-596
Authors:
Meneghesso, G
Zanoni, E
Gerosa, A
Pavan, P
Stadler, W
Esmark, K
Guggenmos, X
Citation: G. Meneghesso et al., Test structures and testing methods for electrostatic discharge: results of PROPHECY project, MICROEL REL, 39(5), 1999, pp. 635-646
Authors:
Meneghesso, G
Massari, G
Buttari, D
Bortoletto, A
Maretto, M
Zanoni, E
Citation: G. Meneghesso et al., DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs, MICROEL REL, 39(12), 1999, pp. 1759-1763
Authors:
Bovolon, N
Schultheis, R
Muller, JE
Zwicknagl, P
Zanoni, E
Citation: N. Bovolon et al., Theoretical and experimental investigation of the collector-emitter offsetvoltage of AlGaAs/GaAs heterojunction bipolar transistors, IEEE DEVICE, 46(4), 1999, pp. 622-627
Authors:
Meneghesso, G
Neviani, A
Oesterholt, R
Matloubian, M
Liu, TK
Brown, JJ
Canali, C
Zanoni, E
Citation: G. Meneghesso et al., On-state and off-state breakdown in GaInAs/InP composite-channel HEMT's with variable GaInAs channel thickness, IEEE DEVICE, 46(1), 1999, pp. 2-9
Authors:
Novo, A
Gerosa, A
Neviani, A
Mozzi, A
Zanoni, E
Citation: A. Novo et al., Programmable voltage multiplier for pacemaker output pulse generation, ELECTR LETT, 35(7), 1999, pp. 560-561
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